Taiwan semiconductor manufacturing co., ltd. (20240194785). FINFET DEVICE simplified abstract

FINFET DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chia Tai Lin of Taichung City (TW)

Yih-Ann Lin of Jhudong Township (TW)

An-Shen Chang of Jubei City (TW)

Ryan Chia-Jen Chen of Chiayi (TW)

Chao-Cheng Chen of Hsin-Chu City (TW)

FINFET DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194785 titled 'FINFET DEVICE

The abstract describes a fin-type field-effect transistor (FinFET) device with multiple fins over a substrate, a dielectric layer filling the space between the fins, and a dielectric trench with a vertical profile. The device also features a second portion of the fins recessed and exposed in the dielectric trench, with a rounded-convex-shape top profile.

• The semiconductor device includes multiple fins formed over a substrate.
• A dielectric layer fills the space between the fins and covers a first portion of the fins.
• A dielectric trench with a vertical profile is formed in the dielectric layer.
• A second portion of the fins is recessed and exposed in the dielectric trench.
• The second portion of the fins has a rounded-convex-shape top profile.

Potential Applications: - Advanced semiconductor devices - High-performance electronics - Next-generation computing systems

Problems Solved: - Enhanced performance and efficiency of field-effect transistors - Improved control over electrical properties - Reduction of leakage currents

Benefits: - Increased speed and reliability of electronic devices - Lower power consumption - Miniaturization of electronic components

Commercial Applications: Title: "Innovative FinFET Technology for High-Performance Electronics" This technology can be utilized in: - Smartphone processors - Data center servers - Automotive electronics

Prior Art: Researchers can explore prior patents related to FinFET technology, dielectric layers, and semiconductor device fabrication processes.

Frequently Updated Research: Researchers are continuously exploring ways to optimize FinFET structures for even higher performance and efficiency.

Questions about FinFET Technology: 1. How does the dielectric trench impact the performance of the FinFET device? 2. What are the key advantages of using a rounded-convex-shape top profile for the fins in this semiconductor device?

Original Abstract Submitted

a fin-type field-effect transistor (finfet) device includes a plurality of fins formed over a substrate. the semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. the dielectric trench has a vertical profile. the semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. the second portion of the plurality of fins have a rounded-convex-shape top profile.