Taiwan semiconductor manufacturing co., ltd. (20240194784). SOURCE/DRAIN EPITAXIAL LAYER PROFILE simplified abstract
Contents
- 1 SOURCE/DRAIN EPITAXIAL LAYER PROFILE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SOURCE/DRAIN EPITAXIAL LAYER PROFILE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about SiGe Epitaxial Growth
- 1.13 Original Abstract Submitted
SOURCE/DRAIN EPITAXIAL LAYER PROFILE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hsin-Chi Chen of Tainan City (TW)
Kun-Tsang Chuang of Maoli (TW)
SOURCE/DRAIN EPITAXIAL LAYER PROFILE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194784 titled 'SOURCE/DRAIN EPITAXIAL LAYER PROFILE
Simplified Explanation
The method described in the patent application aims to prevent the formation of facets in source/drain silicon germanium (SiGe) epitaxial layers by using a specific process involving isolation regions, gate structures, and photoresist structures.
- The method involves forming an isolation region around a semiconductor layer and a gate structure partially over the semiconductor layer and the isolation region.
- First, photoresist structures are disposed over the gate structure, a portion of the isolation region, and a portion of the semiconductor layer, and doping with germanium (Ge) is done on exposed portions to create Ge-doped regions.
- Second photoresist structures are then placed over the isolation region, and exposed Ge-doped regions in the semiconductor layer are etched to form openings.
- Finally, a SiGe epitaxial stack is grown in the openings.
Key Features and Innovation
- Utilizes isolation regions, gate structures, and photoresist structures to prevent facet formation in SiGe epitaxial layers.
- Ge-doping process helps in creating specific regions within the semiconductor layer.
- Etching of Ge-doped regions leads to the formation of openings for SiGe epitaxial growth.
Potential Applications
The method can be applied in the semiconductor industry for the production of advanced electronic devices requiring precise SiGe epitaxial layers.
Problems Solved
This technology addresses the issue of facet formation in source/drain SiGe epitaxial layers, which can affect the performance and reliability of semiconductor devices.
Benefits
- Improved quality and uniformity of SiGe epitaxial layers.
- Enhanced performance and reliability of electronic devices.
- Cost-effective manufacturing process.
Commercial Applications
- Semiconductor manufacturing for high-performance electronic devices.
- Production of advanced integrated circuits.
- Development of next-generation semiconductor components.
Prior Art
Readers can explore prior research on SiGe epitaxial growth processes and methods to mitigate facet formation in semiconductor devices.
Frequently Updated Research
Stay updated on the latest advancements in SiGe epitaxial growth techniques and materials for semiconductor applications.
Questions about SiGe Epitaxial Growth
How does the Ge-doping process contribute to preventing facet formation in SiGe epitaxial layers?
The Ge-doping process helps in creating specific regions within the semiconductor layer, which play a crucial role in inhibiting facet formation during epitaxial growth.
What are the potential challenges in implementing this method on an industrial scale?
Implementing this method on an industrial scale may require optimization of processes, materials, and equipment to ensure consistent and reliable results.
Original Abstract Submitted
the present disclosure describes a method that mitigates the formation of facets in source/drain silicon germanium (sige) epitaxial layers. the method includes forming an isolation region around a semiconductor layer and a gate structure partially over the semiconductor layer and the isolation region. disposing first photoresist structures over the gate structure, a portion of the isolation region, and a portion of the semiconductor layer and doping, with germanium (ge), exposed portions of the semiconductor layer and exposed portions of the isolation region to form ge-doped regions that extend from the semiconductor layer to the isolation region. the method further includes disposing second photoresist structures over the isolation region and etching exposed ge-doped regions in the semiconductor layer to form openings, where the openings include at least one common sidewall with the ge-doped regions in the isolation region. finally the method includes growing a sige epitaxial stack in the openings.
