Taiwan semiconductor manufacturing co., ltd. (20240194766). SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE simplified abstract
Contents
SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hsiao-Chun Chang of Hsinchu County (TW)
Guan-Jie Shen of Hsinchu City (TW)
SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194766 titled 'SOURCE/DRAIN STRUCTURE FOR SEMICONDCUTOR DEVICE
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure includes a substrate, a fin structure over the substrate, a gate structure over a first portion of the fin structure, and an epitaxial region formed in a second portion of the fin structure. The epitaxial region consists of a first semiconductor layer and an n-type second semiconductor layer, with the first semiconductor layer having a greater lattice constant than the second semiconductor layer.
- The semiconductor structure includes a unique epitaxial region with different semiconductor layers.
- The first semiconductor layer has a larger lattice constant than the second semiconductor layer.
- The method involves forming the epitaxial region in a specific portion of the fin structure.
- The structure allows for improved performance and efficiency in semiconductor devices.
Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices such as transistors, diodes, and integrated circuits.
Problems Solved: This innovation addresses the need for enhanced performance and efficiency in semiconductor structures by utilizing a unique epitaxial region.
Benefits: Improved performance, efficiency, and reliability in semiconductor devices. Enhanced functionality and speed in electronic applications.
Commercial Applications: This technology has potential commercial uses in the semiconductor industry for the production of high-performance electronic devices.
Prior Art: Researchers can explore prior art related to semiconductor structures, epitaxial regions, and lattice constants in semiconductor materials.
Frequently Updated Research: Researchers are continually studying the optimization of epitaxial regions in semiconductor structures for enhanced device performance.
Questions about Semiconductor Structures: 1. How does the lattice constant affect the performance of semiconductor devices? 2. What are the key differences between the first and second semiconductor layers in the epitaxial region?
Original Abstract Submitted
the present disclosure describes a semiconductor structure and a method for forming the same. the semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over a first portion of the fin structure, and an epitaxial region formed in a second portion of the fin structure. the epitaxial region can include a first semiconductor layer and an n-type second semiconductor layer formed over the first semiconductor layer. a lattice constant of the first semiconductor layer can be greater than that of the second semiconductor layer.
