Taiwan semiconductor manufacturing co., ltd. (20240194760). DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES simplified abstract

DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chih-Hao Chang of Hsinchu City (TW)

Cheng-Yi Peng of Taipei City (TW)

Wei-Yang Lee of Taipei City (TW)

Chia-Pin Lin of Xinpu Township (TW)

DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194760 titled 'DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES

The abstract describes a semiconductor device with a gate-all-around transistor that includes dielectric regions containing dielectric gases. These regions help reduce parasitic capacitance in the transistor.

• The semiconductor device features a gate-all-around transistor with dielectric regions containing dielectric gases.
• The dielectric regions reduce parasitic capacitance in the transistor.
• The dielectric regions are strategically placed between different regions of the transistor to optimize performance.

Potential Applications: - This technology can be applied in the development of high-performance semiconductor devices. - It can be used in advanced electronic devices requiring efficient transistor operation.

Problems Solved: - Reduces parasitic capacitance in gate-all-around transistors. - Improves overall performance and efficiency of semiconductor devices.

Benefits: - Enhanced performance and efficiency in semiconductor devices. - Reduction in parasitic capacitance leading to improved functionality.

Commercial Applications: Title: Enhanced Semiconductor Devices with Reduced Parasitic Capacitance This technology can be utilized in the production of high-performance electronic devices such as smartphones, tablets, and computers. It can also benefit the semiconductor industry by improving the efficiency of integrated circuits.

Prior Art: Further research can be conducted on gate-all-around transistors and dielectric regions in semiconductor devices to explore existing technologies and advancements in this field.

Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the performance of semiconductor devices, including gate-all-around transistors with dielectric regions.

Questions about Semiconductor Devices with Dielectric Regions: 1. How do dielectric regions with dielectric gases contribute to reducing parasitic capacitance in semiconductor devices? 2. What are the potential challenges in implementing dielectric regions in gate-all-around transistors for commercial production?

Original Abstract Submitted

some implementations described herein provide a semiconductor device and methods of formation. the semiconductor device includes a gate-all-around transistor having one or more dielectric regions that include or more dielectric gases. the dielectric regions may include a first dielectric region between epitaxial regions (e.g., source/drain regions) and a first portion of a gate structure of the gate-all-around transistor. the dielectric regions may further include a second dielectric region between a contact structure of gate-all-around transistor and a second portion of the gate structure. by including the dielectric regions in the gate-all-around transistor, a parasitic capacitance associated with the gate-all-around transistor may be reduced relative to another gate-all-around transistor not including the dielectric regions.