Taiwan semiconductor manufacturing co., ltd. (20240194758). GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS simplified abstract

GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Zhi-Chang Lin of Hsinchu (TW)

Kuan-Ting Pan of Hsinchu (TW)

Shih-Cheng Chen of Hsinchu (TW)

Jung-Hung Chang of Hsinchu (TW)

Lo-Heng Chang of Hsinchu (TW)

Chien-Ning Yao of Hsinchu (TW)

Kuo-Cheng Chiang of Hsinchu (TW)

GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194758 titled 'GATE ALL AROUND TRANSISTOR WITH DUAL INNER SPACERS

The abstract describes a method for forming a gate all-around transistor by utilizing semiconductor nanosheets and various spacers.

• Formation of semiconductor nanosheets is a key feature of the method.
• Cladding inner spacer is formed between the source region and gate region of the transistor.
• Sheet inner spacers are created between the semiconductor nanosheets in a separate deposition process.

Potential Applications: - Advanced semiconductor technology - High-performance electronic devices - Nanotechnology research and development

Problems Solved: - Enhancing transistor performance - Improving efficiency in electronic devices - Facilitating miniaturization of components

Benefits: - Increased transistor functionality - Enhanced device performance - Potential for smaller and more efficient electronics

Commercial Applications: Title: "Innovative Gate-All-Around Transistor Technology for Next-Generation Electronics" This technology could be applied in the production of smartphones, tablets, computers, and other electronic devices, leading to more powerful and energy-efficient products.

Prior Art: Readers can explore prior research on gate-all-around transistors, semiconductor nanosheets, and spacer technologies to gain a deeper understanding of the field.

Frequently Updated Research: Stay informed about the latest advancements in semiconductor nanosheets, transistor design, and nanotechnology applications to remain at the forefront of technological innovation.

Questions about Gate-All-Around Transistor Technology: 1. How does the use of semiconductor nanosheets improve transistor performance?

  - Semiconductor nanosheets enhance the conductivity and efficiency of the transistor by providing a larger surface area for electron flow.

2. What are the potential challenges in implementing gate-all-around transistor technology in commercial devices?

  - Challenges may include scalability, manufacturing costs, and compatibility with existing technologies.

Original Abstract Submitted

a method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. the method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. the method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.