Taiwan semiconductor manufacturing co., ltd. (20240194756). VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR simplified abstract
Contents
- 1 VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Prior Art
- 1.9 Frequently Updated Research
- 1.10 Questions about Vertical Gate All-Around Transistors
- 1.11 Original Abstract Submitted
VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Cheng-Ting Chung of Hsinchu (TW)
VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194756 titled 'VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR
The method described in the abstract involves forming vertical gate all-around transistors by creating a stack of semiconductor layers on a lower source/drain region. This stack includes a first layer, a second layer on top of the first layer, and a third layer on top of the second layer. The first and third layers have similar compositions and can be selectively etched with respect to the second layer. The first and second layers can be selectively removed and replaced with inner spacers, while the second layer can be selectively removed and replaced with a gate electrode.
- Formation of vertical gate all-around transistors
- Stack of semiconductor layers on a lower source/drain region
- Selective etching of layers for removal and replacement with inner spacers and gate electrode
Potential Applications
The technology can be applied in the semiconductor industry for the development of advanced transistors with improved performance and efficiency.
Problems Solved
This method addresses the need for more efficient and compact transistor designs in semiconductor devices.
Benefits
The technology enables the creation of vertical gate all-around transistors, which can lead to enhanced device performance and reduced power consumption.
Commercial Applications
This innovation has potential commercial applications in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics.
Prior Art
Readers interested in exploring prior art related to this technology can start by researching advancements in vertical transistor design and semiconductor manufacturing processes.
Frequently Updated Research
Stay informed about the latest research and developments in vertical transistor technology to understand the evolving landscape of semiconductor devices.
Questions about Vertical Gate All-Around Transistors
What are the key advantages of vertical gate all-around transistors over traditional transistor designs?
Vertical gate all-around transistors offer improved control over the flow of current, leading to enhanced performance and efficiency compared to conventional transistor structures.
How does the selective etching process in the formation of vertical gate all-around transistors contribute to the overall device performance?
The selective etching process allows for precise removal and replacement of semiconductor layers, enabling the customization of transistor properties for optimal performance.
Original Abstract Submitted
a method for forming vertical gate all around transistors includes forming stack of semiconductor layers on a lower source/drain region. the stack of semiconductor layers includes a first layer, a second layer on the first layer, and a third layer on the second layer. the first and third layers have substantially identical compositions and are selectively etchable with respect to the second layer. the first and second layers can be selectively removed and replaced with inner spacers. the second layer can be selectively removed and replaced with a gate electrode.
