Taiwan semiconductor manufacturing co., ltd. (20240194749). SEMICONDUCTOR DEVICES simplified abstract
Contents
SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sai-Hooi Yeong of Perdana (MY)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194749 titled 'SEMICONDUCTOR DEVICES
The patent application describes a device with a unique structure involving nanostructures and epitaxial regions for improved performance.
- First nanostructure with a channel region and a lightly doped source/drain region.
- First epitaxial source/drain region wrapped around the lightly doped source/drain region.
- Interlayer dielectric over the epitaxial source/drain region.
- Source/drain contact extending through the interlayer dielectric, wrapped around the epitaxial source/drain region.
- Gate stack adjacent to the source/drain contact and the epitaxial source/drain region, wrapped around the channel region.
Potential Applications: - Advanced semiconductor devices - High-performance electronics - Nanotechnology research
Problems Solved: - Enhanced device performance - Improved conductivity and efficiency - Better control over electron flow
Benefits: - Increased speed and efficiency of electronic devices - Enhanced functionality in small-scale applications - Potential for further miniaturization in technology
Commercial Applications: - Semiconductor industry for manufacturing high-performance chips - Electronics sector for developing cutting-edge devices - Research institutions for nanotechnology advancements
Questions about the Technology: 1. How does the epitaxial source/drain region contribute to the device's performance? 2. What are the advantages of wrapping the gate stack around the channel region?
Frequently Updated Research: - Ongoing studies on nanostructure design and its impact on device performance - Research on epitaxial growth techniques for semiconductor applications.
Original Abstract Submitted
in an embodiment, a device includes: a first nanostructure over a substrate, the first nanostructure including a channel region and a first lightly doped source/drain region, the first lightly doped source/drain region adjacent the channel region; a first epitaxial source/drain region wrapped around four sides of the first lightly doped source/drain region; an interlayer dielectric over the first epitaxial source/drain region; a source/drain contact extending through the interlayer dielectric, the source/drain contact wrapped around four sides of the first epitaxial source/drain region; and a gate stack adjacent the source/drain contact and the first epitaxial source/drain region, the gate stack wrapped around four sides of the channel region.
