Taiwan semiconductor manufacturing co., ltd. (20240194730). Interconnect Layout for Semiconductor Device simplified abstract

Interconnect Layout for Semiconductor Device

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chun-Hsiung Tsai of Xinpu Township (TW)

Shahaji B. More of Hsinchu (TW)

Yu-Ming Lin of Hsinchu (TW)

Clement Hsingjen Wann of Carmel NY (US)

Interconnect Layout for Semiconductor Device - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194730 titled 'Interconnect Layout for Semiconductor Device

Simplified Explanation

The patent application describes a semiconductor device with a deep trench capacitor and an interconnect structure.

• The semiconductor device includes a substrate, a deep trench capacitor (DTC), and an interconnect structure.
• The interconnect structure consists of a seal ring structure, a first conductive via, and a first conductive line.
• The seal ring structure is in electrical contact with the substrate, the first conductive via is in contact with the DTC, and the first conductive line connects the seal ring structure to the first conductive via.

Key Features and Innovation

• Incorporates a deep trench capacitor within the substrate of the semiconductor device.
• Utilizes an interconnect structure with a seal ring structure, a first conductive via, and a first conductive line.
• Enables electrical coupling between the seal ring structure and the deep trench capacitor.

Potential Applications

The technology can be applied in various semiconductor devices requiring deep trench capacitors and interconnect structures.

Problems Solved

• Provides a solution for integrating deep trench capacitors within a semiconductor device.
• Facilitates efficient electrical coupling between different components of the device.

Benefits

• Improved performance and functionality of semiconductor devices.
• Enhanced electrical connectivity within the device.
• Potential for increased efficiency and reliability in operation.

Commercial Applications

Title: Semiconductor Device with Deep Trench Capacitor and Interconnect Structure This technology can be utilized in the manufacturing of advanced electronic devices such as smartphones, tablets, and computers. It has the potential to enhance the performance and reliability of these devices, leading to a competitive edge in the market.

Prior Art

Readers can explore prior art related to deep trench capacitors, interconnect structures, and semiconductor device integration to gain a better understanding of the technological advancements in this field.

Frequently Updated Research

Researchers are constantly working on improving the design and efficiency of semiconductor devices, including deep trench capacitors and interconnect structures. Stay updated on the latest developments in this area to leverage cutting-edge technology.

Questions about Semiconductor Device with Deep Trench Capacitor and Interconnect Structure

What are the key components of the semiconductor device described in the patent application?

The key components include a substrate, a deep trench capacitor, an interconnect structure with a seal ring structure, a first conductive via, and a first conductive line.

How does the technology improve the performance of semiconductor devices?

The technology enhances the electrical connectivity and efficiency within the device, leading to improved overall performance and functionality.

Original Abstract Submitted

a semiconductor device and a method of forming the same are provided. the semiconductor device includes a substrate, a deep trench capacitor (dtc) having a portion within the substrate, and an interconnect structure over the dtc and the substrate. the interconnect structure includes a seal ring structure in electrical contact with the substrate, a first conductive via in electrical contact with the dtc, and a first conductive line electrically coupling the seal ring structure to the first conductive via.