Taiwan semiconductor manufacturing co., ltd. (20240194676). GATE ISOLATION STRUCTURE simplified abstract
Contents
GATE ISOLATION STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Jia-Chuan You of Taoyuan County (TW)
Chia-Hao Chang of Hsinchu City (TW)
Kuo-Cheng Chiang of Hsinchu County (TW)
Kuan-Lun Cheng of Hsin-Chu (TW)
Chih-Hao Wang of Hsinchu County (TW)
GATE ISOLATION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194676 titled 'GATE ISOLATION STRUCTURE
The semiconductor device described in the abstract includes two gate structures, each with a metal layer, and a gate isolation structure between them.
- The device features a first gate structure and a second gate structure aligned in a specific direction.
- A first metal layer is positioned over the first gate structure, while a second metal layer is placed over the second gate structure.
- A gate isolation structure extends between the first gate structure and the second gate structure, as well as between the first metal layer and the second metal layer.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find applications in the development of high-performance integrated circuits and microprocessors.
Problems Solved: - The technology addresses the need for improved gate structures and isolation techniques in semiconductor devices. - It helps enhance the performance and reliability of electronic components.
Benefits: - Improved efficiency and functionality of semiconductor devices. - Enhanced performance and durability of integrated circuits. - Potential for increased speed and processing power in electronic devices.
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronic Performance This technology has the potential to revolutionize the semiconductor industry by enabling the production of more efficient and reliable electronic components. It could be utilized in various commercial applications, including consumer electronics, telecommunications, and computing.
Questions about the technology: 1. How does the gate isolation structure contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of having aligned gate structures in this technology?
Original Abstract Submitted
a semiconductor device according to the present disclosure includes a first gate structure and a second gate structure aligned along a direction, a first metal layer disposed over the first gate structure, a second metal layer disposed over the second gate structure, and a gate isolation structure extending between the first gate structure and the second gate structure as well as between the first metal layer and the second metal layer.
