Taiwan semiconductor manufacturing co., ltd. (20240194675). SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract

SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Kuo-Cheng Ching of Hsinchu County (TW)

Shi-Ning Ju of Hsinchu City (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194675 titled 'SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS

The semiconductor device described in the abstract consists of first and second semiconductive fins, a first dielectric layer, a first gate structure, a spacer layer, and an oxide material. The first dielectric layer is positioned between the first and second semiconductive fins and has a U-shaped profile when viewed from a cross-sectional perspective. The first gate structure spans across the semiconductive fins and the dielectric layer, while the spacer layer underlies the dielectric layer and surrounds the lower portions of the fins. The oxide material is embedded within the dielectric layer at a higher elevation than the spacer layer.

• The semiconductor device features first and second semiconductive fins, a dielectric layer, a gate structure, a spacer layer, and an oxide material.
• The dielectric layer has a U-shaped profile and is located between the semiconductive fins.
• The gate structure extends across the fins and the dielectric layer.
• The spacer layer underlies the dielectric layer and surrounds the lower portions of the fins.
• The oxide material is nested within the dielectric layer at a higher elevation than the spacer layer.

Potential Applications: This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as in integrated circuits and microprocessors.

Problems Solved: This innovation addresses the need for improved performance and efficiency in semiconductor devices by optimizing the structure and materials used in their fabrication.

Benefits: The use of this technology can lead to enhanced functionality, speed, and power efficiency in semiconductor devices, contributing to overall advancements in electronic technology.

Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the production of high-performance electronic devices for consumer electronics, telecommunications, and computing.

Prior Art: Readers interested in exploring prior art related to this technology may consider researching patents and publications in the field of semiconductor device fabrication, particularly focusing on innovations in dielectric materials and gate structures.

Frequently Updated Research: Stay informed about the latest developments in semiconductor device technology by following research publications and industry updates on advancements in materials, structures, and performance optimization.

Questions about Semiconductor Device Innovation: 1. What are the key advantages of using a U-shaped dielectric layer in semiconductor devices? 2. How does the placement of the oxide material within the dielectric layer impact the performance of the device?

Original Abstract Submitted

a semiconductor device includes first and second semiconductive fins, a first dielectric layer, a first gate structure, a spacer layer, and an oxide material. the first dielectric layer is laterally between the first and second semiconductive fins. from a cross-sectional view taken along a direction perpendicular to a lengthwise direction of the first semiconductive fin, the first dielectric layer has a u-shaped profile. the first gate structure extends across the first and second semiconductive fins and the first dielectric layer. the spacer layer underlies the first dielectric layer and further extends to laterally surround a lower portion of the first dielectric layer, a lower portion of the first semiconductive fin, and a lower portion of the second semiconductive fin. the oxide material is nested in the first dielectric layer. a top surface of the oxide material is at an elevation higher than a top surface of the spacer layer.