Taiwan semiconductor manufacturing co., ltd. (20240194674). SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract
Contents
SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Shi-Ning Ju of Hsin Chiu City (TW)
Kuo-Cheng Chiang of Zhubei City (TW)
Kuan-Lun Cheng of Tainan City (TW)
Chih-Hao Wang of Baoshan Township (TW)
SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194674 titled 'SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE
The semiconductor device structure described in the patent application consists of multiple semiconductor nanostructures with a gate stack wrapped around them. Additionally, the structure includes a first epitaxial structure and a second epitaxial structure sandwiching some of the semiconductor nanostructures, as well as an isolation structure that extends across the edges of the semiconductor nanostructures.
- The semiconductor device structure features multiple semiconductor nanostructures.
- A gate stack is wrapped around the semiconductor nanostructures.
- The structure includes a first epitaxial structure and a second epitaxial structure sandwiching some of the semiconductor nanostructures.
- An isolation structure continuously extends across the edges of the semiconductor nanostructures.
Potential Applications: - This technology could be applied in the development of advanced semiconductor devices. - It may find use in the manufacturing of high-performance electronic components.
Problems Solved: - Provides enhanced performance and functionality in semiconductor devices. - Offers improved isolation and structural integrity for nanostructures.
Benefits: - Increased efficiency and performance in semiconductor devices. - Enhanced structural stability and isolation for nanostructures.
Commercial Applications: Title: Advanced Semiconductor Device Structures for Enhanced Performance This technology could be utilized in the production of cutting-edge electronic devices, potentially impacting industries such as telecommunications, computing, and consumer electronics.
Prior Art: Further research can be conducted in the field of semiconductor nanostructures and epitaxial structures to explore existing technologies and innovations related to this patent application.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device structures, epitaxial growth techniques, and nanostructure fabrication methods to enhance the understanding and application of this technology.
Questions about Semiconductor Device Structures: 1. What are the key advantages of using semiconductor nanostructures in electronic devices? 2. How does the epitaxial growth process contribute to the performance of semiconductor devices?
Original Abstract Submitted
a semiconductor device structure is provided. the semiconductor device structure includes multiple semiconductor nanostructures and a gate stack wrapped around the semiconductor nanostructures. the semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching one or more of the semiconductor nanostructures. the semiconductor device structure further includes an isolation structure continuously extending across edges of the semiconductor nanostructures.
