Taiwan semiconductor manufacturing co., ltd. (20240194593). SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chia-Wei Su of Taoyuan City (TW)

Yung-Hsu Wu of Taipei City (TW)

Hsin-Ping Chen of Hsinchu County (TW)

Chih Wei Lu of Hsinchu County (TW)

Wei-Hao Liao of New Taipei City (TW)

Hsi-Wen Tien of Hsinchu County (TW)

Cherng-Shiaw Tsai of New Taipei City (TW)

SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194593 titled 'SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME

The abstract of the patent application describes a method of forming a semiconductor device. It involves providing a substrate with an electric component, forming a composite dielectric layer on the substrate to cover the electric component, creating an opening through the composite dielectric layer, widening the upper portion of the opening through a directional etching process, and forming a metal feature in the opening.

• Key Features and Innovation:

 - Formation of a composite dielectric layer to protect the electric component on the substrate.
 - Precision widening of the opening through a directional etching process.
 - Integration of a metal feature within the opening for semiconductor device fabrication.

• Potential Applications:

 - Semiconductor manufacturing industry for creating advanced devices.
 - Electronics industry for improving the performance of electronic components.
 - Research and development for exploring new materials and processes in semiconductor technology.

• Problems Solved:

 - Enhancing the protection of electric components on substrates.
 - Facilitating the fabrication of semiconductor devices with precise features.
 - Improving the overall performance and reliability of semiconductor devices.

• Benefits:

 - Increased efficiency in semiconductor device manufacturing.
 - Enhanced durability and functionality of electronic components.
 - Potential for developing cutting-edge semiconductor technologies.

• Commercial Applications:

 - "Advanced Semiconductor Device Fabrication Method: Enhancing Efficiency and Performance"
 - This technology can be utilized by semiconductor companies for producing high-quality devices with improved features, attracting a wider market segment and increasing competitiveness in the industry.

• Prior Art:

 - Further research can be conducted on similar methods used in semiconductor device fabrication processes to identify any existing patents or publications related to this technology.

• Frequently Updated Research:

 - Stay updated on the latest advancements in semiconductor manufacturing techniques and materials to enhance the efficiency and performance of semiconductor devices.

Questions about Semiconductor Device Fabrication Method:

1. How does the directional etching process contribute to widening the opening in the composite dielectric layer?

  - The directional etching process selectively removes material to widen the upper portion of the opening, allowing for precise formation of features within the semiconductor device.

2. What are the potential challenges faced in integrating metal features within the opening in semiconductor device fabrication?

  - Challenges may include ensuring proper alignment and adhesion of the metal feature within the opening, as well as optimizing the conductivity and reliability of the feature for efficient device performance.

Original Abstract Submitted

a method of forming a semiconductor device includes the following operations. a substrate is provided with an electric component. a composite dielectric layer is formed on the substrate and covers the electric component. an opening is formed through the composite dielectric layer. a directional etching process is performed to widen an upper portion of the opening. a metal feature is formed in the opening.