Taiwan semiconductor manufacturing co., ltd. (20240194588). SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Ming-Fa Chen of Taichung City (TW)

Sung-Feng Yeh of Taipei City (TW)

Tzuan-Horng Liu of Taoyuan City (TW)

Chao-Wen Shih of Hsinchu County (TW)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194588 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

The semiconductor structure described in the patent application consists of a first semiconductor substrate, a first interconnect structure below the substrate, a through substrate via (TSV) penetrating through the substrate and extending into the interconnect structure, and a first bonding conductor below the interconnect structure, electrically coupled to the TSV.

• The TSV has a first surface in the interconnect structure and a second surface opposite to the first surface.
• The first bonding conductor has a first bonding surface facing away from the interconnect structure.
• The boundary of the first bonding surface of the first bonding conductor overlaps with the boundary of the first surface of the TSV.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of integrated circuits.

Problems Solved: - Enhances electrical connectivity within semiconductor structures. - Enables more compact and reliable semiconductor designs.

Benefits: - Increased functionality and performance of semiconductor devices. - Enhanced reliability and durability of integrated circuits.

Commercial Applications: Title: Advanced Semiconductor Structures for Improved Performance This technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and automotive electronics. It can also benefit industries like telecommunications, aerospace, and medical devices.

Questions about the technology: 1. How does the overlap of boundaries between the bonding conductor and the TSV surface improve the overall performance of the semiconductor structure? 2. What are the specific challenges in implementing this technology in mass production processes?

Original Abstract Submitted

a semiconductor structure includes a first semiconductor substrate, a first interconnect structure disposed below the first semiconductor substrate, a through substrate via (tsv) penetrating through the first semiconductor substrate and extending into the first interconnect structure, and a first bonding conductor disposed below the first interconnect structure and electrically coupled to the tsv through the first interconnect structure. the tsv includes a first surface in the first interconnect structure and a second surface opposite to the first surface, and the first bonding conductor includes a first bonding surface facing away the first interconnect structure. in a view, a boundary of the first bonding surface of the first bonding conductor overlaps a boundary of the first surface of the tsv.