Taiwan semiconductor manufacturing co., ltd. (20240194537). SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Feng-Ching Chu of Pingtung County (TW)

Wei-Yang Lee of Taipei City (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194537 titled 'SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

The semiconductor device described in the patent application consists of a substrate with regions of opposite conductivity types, isolation features, fins protruding from the substrate, and epitaxial features.

• The device includes a first fin in a first region of the substrate and a second fin in a second region, each with an epitaxial feature on top.
• An isolation feature is present on the sidewalls of the fins and between them, with varying thickness for effective isolation.
• The third portion of the isolation feature has a thickness larger than the first and second portions.

Potential Applications: This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications, including integrated circuits and power electronics.

Problems Solved: The technology addresses the need for improved isolation features in semiconductor devices to enhance performance and reliability.

Benefits: The innovative isolation feature design improves the efficiency and functionality of semiconductor devices, leading to enhanced overall performance.

Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of high-performance electronic devices for consumer electronics, telecommunications, and automotive applications.

Prior Art: Researchers interested in this technology may explore prior art related to semiconductor device isolation features, epitaxial growth techniques, and semiconductor manufacturing processes.

Frequently Updated Research: Researchers and industry professionals may find updated research on semiconductor device fabrication techniques, materials science advancements, and semiconductor device performance optimization relevant to this technology.

Questions about the technology: 1. What are the specific advantages of the unique isolation feature design in this semiconductor device? 2. How does the varying thickness of the isolation feature contribute to improved performance and reliability in the device?

Original Abstract Submitted

a semiconductor device includes a substrate having a first region and a second region of opposite conductivity types, an isolation feature over the substrate, a first fin protruding from the substrate in the first region, a first epitaxial feature over the first fin, a second fin protruding from the substrate in the second region, and a second epitaxial feature over the second fin. the isolation feature includes a first portion disposed on sidewalls of the first fin, a second portion disposed on sidewalls of the second fin, and a third portion located between the first fin and the second fin. the third portion has a thickness larger than the first portion and the second portion.