Taiwan semiconductor manufacturing co., ltd. (20240194522). SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION simplified abstract
Contents
- 1 SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Prior Art
- 1.9 Frequently Updated Research
- 1.10 Questions about Enhanced Conductive Feature Formation in Dielectric Layers for Semiconductor Devices
- 1.11 Original Abstract Submitted
SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Jian-Jou Lian of Tainan City (TW)
Kuo-Bin Huang of Jhubei City (TW)
Li-Min Chen of Zhubei City (TW)
SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194522 titled 'SURFACE MODIFICATION LAYER FOR CONDUCTIVE FEATURE FORMATION
The patent application relates to methods for forming a conductive feature in a dielectric layer in semiconductor processing, as well as the structures formed thereby.
- The structure includes a dielectric layer over a substrate, a surface modification layer, and a conductive feature.
- The dielectric layer has a sidewall, and the surface modification layer, containing phosphorous and carbon, is along the sidewall.
- The conductive feature is along the surface modification layer.
Potential Applications
This technology can be applied in the semiconductor industry for the fabrication of integrated circuits and electronic devices.
Problems Solved
This innovation addresses the challenge of forming reliable and efficient conductive features in dielectric layers in semiconductor processing.
Benefits
The technology offers improved conductivity and adhesion of the conductive features, enhancing the overall performance and reliability of semiconductor devices.
Commercial Applications
"Enhanced Conductive Feature Formation in Dielectric Layers for Semiconductor Devices" can be utilized in the production of advanced electronic components, leading to more efficient and reliable devices in various industries.
Prior Art
Researchers interested in this technology may explore prior art related to surface modification techniques in semiconductor processing and methods for enhancing conductivity in dielectric layers.
Frequently Updated Research
Ongoing research in this field may focus on optimizing the composition of the surface modification layer to further improve the properties of the conductive features.
Questions about Enhanced Conductive Feature Formation in Dielectric Layers for Semiconductor Devices
How does this technology impact the efficiency of semiconductor devices?
This technology enhances the conductivity and adhesion of conductive features in dielectric layers, leading to improved performance and reliability of semiconductor devices.
What are the key components of the surface modification layer in this innovation?
The surface modification layer contains phosphorous and carbon, which play a crucial role in enhancing the properties of the conductive features.
Original Abstract Submitted
embodiments described herein relate generally to methods for forming a conductive feature in a dielectric layer in semiconductor processing and structures formed thereby. in some embodiments, a structure includes a dielectric layer over a substrate, a surface modification layer, and a conductive feature. the dielectric layer has a sidewall. the surface modification layer is along the sidewall, and the surface modification layer includes phosphorous and carbon. the conductive feature is along the surface modification layer.
