Taiwan semiconductor manufacturing co., ltd. (20240194520). CONTACT FORMATION METHOD AND RELATED STRUCTURE simplified abstract

CONTACT FORMATION METHOD AND RELATED STRUCTURE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chao-Hsun Wang of Taoyuan County (TW)

Wang-Jung Hsueh of New Taipei City (TW)

Kuo-Yi Chao of Hsinchu City (TW)

Mei-Yun Wang of Hsin-Chu (TW)

CONTACT FORMATION METHOD AND RELATED STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194520 titled 'CONTACT FORMATION METHOD AND RELATED STRUCTURE

Simplified Explanation: The patent application describes a method and structure for creating a connection between a metal gate layer and a first metal layer in a semiconductor device.

• **Key Features and Innovation:**

   * Deposit a first dielectric layer over a substrate with a metal gate layer.
   * Form an opening in the dielectric layer to expose the substrate.
   * Deposit a first metal layer within the opening.
   * Deposit a second dielectric layer over the first dielectric layer and the first metal layer.
   * Etch the dielectric layers to create a gate via opening exposing the metal gate layer.
   * Remove a portion of the second dielectric layer to form a contact opening exposing the first metal layer.
   * Merge the gate via and contact openings to form a composite opening.
   * Deposit a second metal layer within the composite opening to connect the metal gate layer to the first metal layer.

Potential Applications: This technology can be applied in the semiconductor industry for creating reliable and efficient connections in integrated circuits.

Problems Solved: The method addresses the challenge of forming a secure and stable connection between different metal layers in semiconductor devices.

Benefits: The technology enables the creation of robust metal gate contacts, improving the overall performance and reliability of semiconductor devices.

Commercial Applications: The innovation can be utilized in the production of advanced microprocessors, memory chips, and other semiconductor components, enhancing their functionality and longevity.

Prior Art: Readers can explore prior research on metal gate contacts and via-first processes in semiconductor manufacturing to understand the evolution of this technology.

Frequently Updated Research: Stay informed about the latest advancements in semiconductor fabrication techniques and materials to enhance the efficiency and effectiveness of metal gate contact formation.

Questions about Metal Gate Contact Formation: 1. What are the key challenges in creating connections between metal layers in semiconductor devices? 2. How does the via-first approach improve the reliability of metal gate contacts in integrated circuits?

Original Abstract Submitted

a method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. an opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. a second dielectric layer is deposited over the first dielectric layer and over the first metal layer. the first and second dielectric layers are etched to form a gate via opening. the gate via opening exposes the metal gate layer. a portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. the gate via and contact openings merge to form a composite opening. a second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.