Taiwan semiconductor manufacturing co., ltd. (20240192882). MEMORY DEVICE simplified abstract

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MEMORY DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Jun-Shen Wu of Hsinchu City (TW)

Chi-En Wang of Hsinchu City (TW)

Ren-Shuo Liu of Hsinchu City (TW)

MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240192882 titled 'MEMORY DEVICE

Simplified Explanation: The patent application describes a memory device with a memory array and a selection circuit that identifies and replaces faulty cells storing data related to fields of a floating-point number.

  • The memory device includes a memory array and a selection circuit.
  • The memory array contains at least one first faulty cell and at least one second faulty cell storing data for different fields of a floating-point number.
  • The selection circuit determines the priority of cell replacement operations based on the fault severity.
  • The selection circuit outputs the fault address of the first faulty cell for replacement.

Key Features and Innovation:

  • Identification and replacement of faulty cells in a memory array.
  • Prioritization of cell replacement based on fault severity.
  • Efficient handling of faulty cells storing critical data.

Potential Applications:

  • Memory devices in electronic devices.
  • Data storage systems requiring fault tolerance.
  • Critical systems where data integrity is crucial.

Problems Solved:

  • Addressing faulty cells in memory arrays.
  • Ensuring data integrity in storage systems.
  • Improving reliability of memory devices.

Benefits:

  • Enhanced data reliability.
  • Improved fault tolerance.
  • Extended lifespan of memory devices.

Commercial Applications: Title: Fault-Tolerant Memory Devices for Enhanced Data Integrity This technology can be applied in:

  • Consumer electronics.
  • Industrial automation systems.
  • Aerospace and defense applications.

Prior Art: Prior research in fault-tolerant memory systems and memory cell replacement techniques can provide valuable insights into similar technologies.

Frequently Updated Research: Stay updated on advancements in memory array fault tolerance and data integrity technologies for the latest innovations in the field.

Questions about Memory Device Fault Tolerance: 1. How does the selection circuit prioritize cell replacement operations in the memory device? 2. What are the potential implications of using faulty cells in critical systems?


Original Abstract Submitted

a memory device is provided, including a memory array and a selection circuit. at least one first faulty cell and at least one second faulty cell that are in the memory array store data corresponding to, respectively, first and second fields of a floating-point number. the selection circuit identifies the at least one first faulty cell and the at least one second faulty cell based on a priority of a cell replacement operation which indicates that a priority of the at least one first faulty cell is higher than that of the at least one second faulty cell. the selection circuit further outputs a fault address of the at least one first faulty cell to a redundancy analyzer circuit for replacing the at least one first faulty cell.

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