Taiwan semiconductor manufacturing co., ltd. (20240192601). PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL simplified abstract
Contents
PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Ching-Yu Chang of Hsinchu (TW)
Chin-Hsiang Lin of Hsinchu (TW)
PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240192601 titled 'PHOTORESIST TOP COATING MATERIAL FOR ETCHING RATE CONTROL
The patent application describes a patterning stack for semiconductor manufacturing, consisting of a bottom anti-reflective coating (BARC) layer, a photoresist layer with high etching resistance, and a top coating layer with even greater etching resistance.
- The top coating layer contains a polymer with specific functional units of high etching resistance and acid labile groups, enhancing its overall resistance to etching processes.
- The polymer backbone may also include a silicon cage compound, further improving the durability and performance of the top coating layer.
Potential Applications: - This technology can be used in the fabrication of advanced semiconductor devices, such as integrated circuits and microprocessors. - It can also find applications in the production of high-density memory chips and other electronic components requiring precise patterning.
Problems Solved: - Provides enhanced protection and durability to semiconductor layers during etching processes. - Improves the accuracy and resolution of patterning in semiconductor manufacturing.
Benefits: - Increased efficiency and accuracy in semiconductor manufacturing processes. - Enhanced durability and resistance to etching, leading to higher quality semiconductor devices.
Commercial Applications: Title: Advanced Patterning Stack for Semiconductor Manufacturing This technology can be utilized by semiconductor manufacturers to improve the quality and performance of their products, leading to increased competitiveness in the market.
Prior Art: Further research can be conducted on similar patterning stacks used in semiconductor manufacturing to compare the effectiveness and innovation of this new technology.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor patterning technology to ensure the continued relevance and competitiveness of this innovation.
Questions about Patterning Stack: 1. How does the inclusion of acid labile groups in the polymer backbone enhance the etching resistance of the top coating layer? 2. What are the potential implications of using a silicon cage compound in the top coating layer for semiconductor manufacturing?
Original Abstract Submitted
a patterning stack is provided. the patterning stack includes a bottom anti-reflective coating (barc) layer over a substrate, a photoresist layer having a first etching resistance over the barc layer, and a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer. the top coating layer includes a polymer having a polymer backbone including at least one functional unit of high etching resistance and one or more acid labile groups attacked to the polymer backbone or a silicon cage compound.
