Taiwan semiconductor manufacturing co., ltd. (20240188289). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Simplified Explanation
- 1.6 Key Features and Innovation
- 1.7 Potential Applications
- 1.8 Problems Solved
- 1.9 Benefits
- 1.10 Commercial Applications
- 1.11 Prior Art
- 1.12 Frequently Updated Research
- 1.13 Unanswered Questions
- 1.14 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chen-Ming Huang of Tainan City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240188289 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
Simplified Explanation
Simplified Explanation
The method described in the patent application involves forming an integrated chip by creating conductive structures and sidewall spacers on a substrate.
- Conductive structures are formed over the substrate.
- Intermediate sidewall spacers are created around the conductive structures.
- A masking material is applied over the substrate and the sidewall spacers.
- Part of the sidewall spacer protrudes from the masking material.
- The protruding part of the sidewall spacer is etched to form a sidewall spacer.
Key Features and Innovation
- Formation of conductive structures and sidewall spacers on a substrate.
- Use of masking material to protect and define the sidewall spacers.
- Etching process to create precise sidewall spacers for integrated chip fabrication.
Potential Applications
This technology can be applied in the semiconductor industry for manufacturing integrated chips with intricate structures.
Problems Solved
This method addresses the need for precise and controlled formation of sidewall spacers in integrated chip fabrication.
Benefits
- Improved accuracy in creating sidewall spacers.
- Enhanced efficiency in integrated chip manufacturing processes.
Commercial Applications
- Semiconductor manufacturing industry for integrated chip production.
- Electronics industry for advanced device fabrication.
Prior Art
Information on prior methods of forming sidewall spacers in integrated chip manufacturing processes.
Frequently Updated Research
Ongoing research on refining the process of creating sidewall spacers for integrated chip production.
Unanswered Questions
Question 1
How does the etching process impact the overall performance of the integrated chip?
Question 2
Are there alternative materials that can be used for masking in the formation of sidewall spacers?
Original Abstract Submitted
the present disclosure, in some embodiments, relates to a method of forming an integrated chip. the method includes forming a first conductive structure over a substrate. a first intermediate sidewall spacer is formed to surround the first conductive structure. a masking material is formed over the substrate and around the first intermediate sidewall spacer. a part of the first intermediate sidewall spacer protrudes outward from the masking material. the part of the first intermediate sidewall spacer that protrudes outward from the masking material is etched to form a first sidewall spacer.
