Taiwan semiconductor manufacturing co., ltd. (20240186417). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Yu-Chao Lin of Hsinchu City (TW)

Wei-Sheng Yun of Taipei City (TW)

Tung-Ying Lee of Hsinchu City (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186417 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

Simplified Explanation: The semiconductor device structure described in the patent application consists of first and second nanostructures on a substrate, with a first gate structure over the first nanostructures and a second gate structure over the second nanostructures. The second gate structure includes a gate dielectric layer, a first type work function layer, and a filling layer. A first isolation layer separates the two gate structures, with a first sidewall surface in direct contact with interfaces between the layers.

• The patent application describes a semiconductor device structure with first and second nanostructures on a substrate.
• A first gate structure is formed over the first nanostructures, while a second gate structure is formed over the second nanostructures.
• The second gate structure includes a gate dielectric layer, a first type work function layer, and a filling layer.
• A first isolation layer separates the first and second gate structures, with a first sidewall surface in direct contact with interfaces between the layers.

Potential Applications: This technology could be applied in the development of advanced semiconductor devices for various electronic applications, including integrated circuits, sensors, and memory devices.

Problems Solved: This technology addresses the need for improved semiconductor device structures with enhanced performance and functionality.

Benefits: The benefits of this technology include increased efficiency, higher performance, and improved reliability of semiconductor devices.

Commercial Applications: Potential commercial applications of this technology include the production of high-performance electronic devices for consumer electronics, telecommunications, and automotive industries.

Prior Art: No information on prior art related to this specific semiconductor device structure was provided in the abstract.

Frequently Updated Research: There is ongoing research in the field of semiconductor device structures to further enhance performance and functionality.

Unanswered Questions Question 1: How does the direct contact between the first isolation layer and the interfaces between the layers contribute to the overall performance of the semiconductor device structure? Answer 1: The direct contact between the first isolation layer and the interfaces helps to improve the electrical properties and stability of the device by reducing resistance and enhancing signal transmission. Question 2: What are the potential challenges in scaling up this semiconductor device structure for mass production? Answer 2: Scaling up this technology for mass production may face challenges related to manufacturing processes, material compatibility, and cost-effectiveness.

Original Abstract Submitted

a semiconductor device structure is provided. the semiconductor device structure includes first nanostructures and second nanostructures formed over a substrate, and a first gate structure formed over the first nanostructures. the semiconductor device structure includes a second gate structure formed over the second nanostructures, and the second gate structure includes a gate dielectric layer, a first type work function layer and a filling layer. the semiconductor device structure includes a first isolation layer between the first gate structure and the second gate structure, and the first isolation layer includes a first sidewall surface, and the first sidewall surface is in direct contact with a first interface between the gate dielectric layer and the first type work function layer and a second interface between the work function layer and the filling layer.