Taiwan semiconductor manufacturing co., ltd. (20240186414). FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract

FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Cheng-Ming Lin of Kaohsiung City (TW)

Sai-Hooi Yeong of Zhubei City (TW)

Ziwei Fang of Hsinchu (TW)

Bo-Feng Young of Taipei (TW)

Chi On Chui of Hsinchu (TW)

Chih-Yu Chang of New Taipei City (TW)

Huang-Lin Chao of Hillsboro OR (US)

FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186414 titled 'FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES

Simplified Explanation

The semiconductor device described in the patent application includes a substrate with first and second spacers, as well as a gate stack situated between the spacers. The gate stack consists of a gate dielectric layer with a crystalline material in the first portion on the substrate and an amorphous material in the second portion on the spacers. Additionally, a gate electrode is present on both portions of the gate dielectric layer.

• The semiconductor device features a unique gate stack design with a combination of crystalline and amorphous materials.
• The gate dielectric layer is divided into distinct portions on the substrate and spacers, enhancing performance.
• The presence of the gate electrode on both portions of the gate dielectric layer ensures efficient operation.

Potential Applications: This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications.

Problems Solved: This innovation addresses the need for improved performance and efficiency in semiconductor devices.

Benefits: Enhanced performance, increased efficiency, and potential for advanced electronic applications.

Commercial Applications: This technology could be utilized in the production of high-performance electronic devices, potentially impacting the semiconductor industry.

Prior Art: No specific information on prior art related to this technology is provided in the abstract.

Frequently Updated Research: There is no information on frequently updated research relevant to this technology in the abstract.

Unanswered Questions: Question 1: How does the combination of crystalline and amorphous materials in the gate dielectric layer impact the overall performance of the semiconductor device? Answer 1: The combination of these materials likely enhances the device's efficiency and functionality by optimizing the gate stack design.

Question 2: What potential challenges or limitations could arise from implementing this unique gate stack design in semiconductor devices? Answer 2: Implementing a novel design like this may require additional testing and optimization to address any unforeseen challenges or limitations that could arise during production and operation.

Original Abstract Submitted

the present disclosure relates to a semiconductor device includes a substrate and first and second spacers on the substrate. the semiconductor device includes a gate stack between the first and second spacers. the gate stack includes a gate dielectric layer having a first portion formed on the substrate and a second portion formed on the first and second spacers. the first portion includes a crystalline material and the second portion comprises an amorphous material. the gate stack further includes a gate electrode on the first and second portions of the gate dielectric layer.