Taiwan semiconductor manufacturing co., ltd. (20240186390). FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract
Contents
- 1 FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Simplified Explanation
- 1.6 Key Features and Innovation
- 1.7 Potential Applications
- 1.8 Problems Solved
- 1.9 Benefits
- 1.10 Commercial Applications
- 1.11 Prior Art
- 1.12 Frequently Updated Research
- 1.13 Unanswered Questions
- 1.14 Original Abstract Submitted
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Ying-Liang Chuang of Hsinchu (TW)
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186390 titled 'FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
Simplified Explanation
Simplified Explanation
A semiconductor device with a fin structure on a substrate, a gate dielectric layer on the fin structure, an interfacial layer on top of the gate dielectric layer, and a gate structure spanning the fin structure.
- The semiconductor device has a fin structure on a substrate.
- A gate dielectric layer is on the fin structure.
- An interfacial layer is on the top part of the gate dielectric layer.
- The bottom part of the gate dielectric layer does not touch the interfacial layer.
- A gate structure crosses over the fin structure.
Key Features and Innovation
- Integration of a fin structure, gate dielectric layer, interfacial layer, and gate structure in a semiconductor device.
- Separation of the gate dielectric layer from the interfacial layer in specific areas.
- Efficient design for improved performance and functionality.
Potential Applications
The technology can be applied in:
- Advanced semiconductor devices.
- High-performance electronics.
- Integrated circuits.
Problems Solved
- Enhanced performance and functionality of semiconductor devices.
- Improved control and efficiency in electronic components.
- Potential for miniaturization and increased capabilities.
Benefits
- Increased efficiency and performance in semiconductor devices.
- Enhanced control and functionality in electronic systems.
- Potential for advancements in technology and innovation.
Commercial Applications
Title: Advanced Semiconductor Devices for High-Performance Electronics This technology can be utilized in:
- Consumer electronics.
- Telecommunications.
- Automotive electronics.
- Aerospace industry.
Prior Art
Information on prior art related to this technology is not available at the moment.
Frequently Updated Research
There is ongoing research on the optimization and application of similar semiconductor technologies in various industries.
Unanswered Questions
Question 1
How does the separation of the gate dielectric layer and interfacial layer impact the overall performance of the semiconductor device?
The separation allows for specific control and optimization of the device's functionality, potentially leading to improved performance and efficiency.
Question 2
What are the potential challenges in scaling this technology for mass production and commercialization?
Scaling the technology may require further research and development to address manufacturing challenges and ensure cost-effectiveness in mass production.
Original Abstract Submitted
a semiconductor device includes a fin structure disposed over a substrate. the semiconductor device includes a gate dielectric layer disposed over the fin structure. the semiconductor device includes an interfacial layer over a top portion of the gate dielectric layer. a bottom portion of gate dielectric layer is free of contact with the interfacial layer. the semiconductor device includes a gate structure straddling the fin structure.
