Taiwan semiconductor manufacturing co., ltd. (20240186373). EPITAXIAL STRUCTURES EXPOSED IN AIRGAPS FOR SEMICONDUCTOR DEVICES simplified abstract

EPITAXIAL STRUCTURES EXPOSED IN AIRGAPS FOR SEMICONDUCTOR DEVICES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Po-Yu Lin of New Taipei City (TW)

Wei-Yang Lee of Taipei City (TW)

Chia-Pin Lin of Hsinchu County (TW)

Tzu-Hua Chiu of Hsinchu (TW)

Kuan-Hao Cheng of Hsinchu (TW)

Wei-Han Fan of Hsin-Chu City (TW)

Li-Li Su of HsinChu County (TW)

Wei-Min Liu of Hsinchu (TW)

EPITAXIAL STRUCTURES EXPOSED IN AIRGAPS FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186373 titled 'EPITAXIAL STRUCTURES EXPOSED IN AIRGAPS FOR SEMICONDUCTOR DEVICES

Simplified Explanation

The semiconductor device described in the patent application features a unique design with channel layers, gate portions, and inner spacers, as well as an air gap for improved performance.

• The semiconductor device includes source/drain features, channel layers, gate portions, and inner spacers.
• An air gap is present between the inner spacer and the source/drain feature.

Key Features and Innovation

• Source/drain feature over a semiconductor substrate.
• Channel layers connected to the source/drain feature.
• Gate portion between vertically adjacent channel layers.
• Inner spacer between the source/drain feature and the gate portion.
• Air gap between the inner spacer and the source/drain feature.

Potential Applications

The technology can be applied in the semiconductor industry for the development of advanced electronic devices with enhanced performance and efficiency.

Problems Solved

The design addresses issues related to signal interference, power consumption, and overall device performance in semiconductor devices.

Benefits

• Improved performance and efficiency.
• Reduced signal interference.
• Lower power consumption.

Commercial Applications

Semiconductor Industry Advancements with Enhanced Performance and Efficiency

The technology can be utilized in the development of next-generation electronic devices, leading to improved performance and efficiency in various applications within the semiconductor industry.

Prior Art

Information on prior art related to this specific semiconductor device design is not provided in the abstract.

Frequently Updated Research

There is no information available on frequently updated research relevant to this technology.

Unanswered Questions

Question 1

How does the presence of the air gap impact the overall performance of the semiconductor device?

The air gap in the semiconductor device design helps reduce signal interference and improve device efficiency by providing isolation between components.

Question 2

What specific challenges in the semiconductor industry does this innovative design aim to address?

The design aims to tackle issues related to signal interference, power consumption, and overall device performance, enhancing the functionality of semiconductor devices in various applications.

Original Abstract Submitted

a semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. the semiconductor device further includes an air gap between the inner spacer and the source/drain feature.