Taiwan semiconductor manufacturing co., ltd. (20240186312). STATIC RANDOM ACCESS MEMORY DEVICE simplified abstract
Contents
- 1 STATIC RANDOM ACCESS MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STATIC RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Simplified Explanation
- 1.6 Key Features and Innovation
- 1.7 Potential Applications
- 1.8 Problems Solved
- 1.9 Benefits
- 1.10 Commercial Applications
- 1.11 Prior Art
- 1.12 Frequently Updated Research
- 1.13 Unanswered Questions
- 1.14 Original Abstract Submitted
STATIC RANDOM ACCESS MEMORY DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Jhon Jhy Liaw of Zhudong Township (TW)
STATIC RANDOM ACCESS MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186312 titled 'STATIC RANDOM ACCESS MEMORY DEVICE
Simplified Explanation
Simplified Explanation
The semiconductor device described in the patent application includes a static random access memory (SRAM) device with two SRAM arrays separated by dummy cells. These dummy cells contain dummy gate electrode layers and contacts, with a first-type well connecting the two SRAM arrays.
- The semiconductor device features a unique design with two SRAM arrays and dummy cells in between.
- The dummy cells have dummy gate electrode layers and contacts.
- A first-type well connects the two SRAM arrays.
Key Features and Innovation
- Two SRAM arrays separated by dummy cells.
- Dummy cells with dummy gate electrode layers and contacts.
- First-type well connecting the SRAM arrays.
Potential Applications
The technology can be applied in various semiconductor devices requiring SRAM functionality, such as in computer memory systems, mobile devices, and other electronic devices.
Problems Solved
The design addresses the need for improved SRAM devices with enhanced performance and reliability by utilizing dummy cells and a first-type well to optimize the functionality of the SRAM arrays.
Benefits
- Improved performance and reliability of SRAM devices.
- Enhanced functionality through the use of dummy cells and a first-type well.
- Potential for increased efficiency in semiconductor devices.
Commercial Applications
- "Innovative SRAM Design for Enhanced Performance and Reliability"
- Potential commercial uses include in computer memory systems, mobile devices, and other electronic devices.
- Market implications include improved semiconductor devices with better memory capabilities.
Prior Art
Information on prior art related to this specific semiconductor device design is not provided in the abstract.
Frequently Updated Research
There is no information on frequently updated research relevant to this technology.
Unanswered Questions
Question 1
How does the presence of dummy cells impact the overall performance of the SRAM device?
The dummy cells in the semiconductor device help optimize the functionality of the SRAM arrays by providing additional support and structure.
Question 2
What specific advantages does the first-type well offer in connecting the two SRAM arrays?
The first-type well ensures a continuous connection between the two SRAM arrays, enhancing the overall efficiency and reliability of the semiconductor device.
Original Abstract Submitted
a semiconductor device including a static random access memory (sram) device includes a first sram array including a first plurality of bit cells arranged in a matrix; a second sram array including a second plurality of bit cells arranged in a matrix; and a plurality of abutting dummy cells disposed between the first sram array and the second sram array. each of the plurality of abutting dummy cells includes a plurality of dummy gate electrode layers and a plurality of dummy contacts. the semiconductor device further includes a first-type well continuously extending from the first sram array to the second sram array. the first-type well is in direct contact with portions of the plurality of dummy contacts.
