Taiwan semiconductor manufacturing co., ltd. (20240186204). METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE WITH HEATING ELEMENT simplified abstract
Contents
- 1 METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE WITH HEATING ELEMENT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE WITH HEATING ELEMENT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE WITH HEATING ELEMENT
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chih-Tsung Shih of Hsinchu City (TW)
Stefan Rusu of Sunnyvale CA (US)
Feng-Wei Kuo of Hsinchu County (TW)
METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE WITH HEATING ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186204 titled 'METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE WITH HEATING ELEMENT
Simplified Explanation
The semiconductor structure described in the abstract includes a semiconductor substrate with a device region and a heating region, a semiconductor device located on the device region, and a heating structure located on the heating region. The heating structure consists of an intrinsic semiconductor area, at least one heating element, and at least one heating pad. The heating element is positioned at the periphery of the intrinsic semiconductor area, and the heating pad is connected to the heating element through a plurality of contact structures to control the temperature of the heating element.
- Semiconductor structure with a heating structure for temperature control
- Heating element located at the periphery of the intrinsic semiconductor area
- Heating pad connected to the heating element through contact structures
- Voltage supplied from contact structures to control the temperature of the heating element
Potential Applications
The technology could be applied in semiconductor manufacturing processes where precise temperature control is required, such as in the production of microchips and electronic devices.
Problems Solved
The heating structure helps in maintaining a stable temperature in the semiconductor structure, which is crucial for the proper functioning of semiconductor devices.
Benefits
- Improved performance and reliability of semiconductor devices - Enhanced control over temperature variations - Increased efficiency in semiconductor manufacturing processes
Potential Commercial Applications
"Semiconductor Heating Structure for Temperature Control in Manufacturing Processes"
Possible Prior Art
There may be prior art related to semiconductor heating structures for temperature control in semiconductor devices, but further research is needed to identify specific examples.
=== What are the potential energy savings associated with implementing this technology? Implementing this technology could lead to energy savings by optimizing the temperature control process in semiconductor manufacturing, reducing energy consumption and improving overall efficiency.
=== How does this technology compare to traditional heating methods in semiconductor manufacturing? This technology offers more precise and localized temperature control compared to traditional heating methods, leading to better performance and reliability in semiconductor devices.
Original Abstract Submitted
a semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. the semiconductor substrate includes a device region and a heating region surrounding the device region. the semiconductor device is located on the device region. the heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. the intrinsic semiconductor area is surrounding the semiconductor device. the at least one heating element is located at a periphery of the intrinsic semiconductor area. the at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.
