Taiwan semiconductor manufacturing co., ltd. (20240186190). Semiconductor Device and Methods of Forming the Same simplified abstract
Contents
- 1 Semiconductor Device and Methods of Forming the Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Semiconductor Device and Methods of Forming the Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 What are the limitations of this technology in terms of scalability and cost-effectiveness?
- 1.11 Original Abstract Submitted
Semiconductor Device and Methods of Forming the Same
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Cheng-Wei Chang of Hsinchu (TW)
Ting-Hsiang Chang of New Taipei City (TW)
Chih-Tang Peng of Zhubei City (TW)
Semiconductor Device and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186190 titled 'Semiconductor Device and Methods of Forming the Same
Simplified Explanation
The method described in the patent application involves forming fins over a semiconductor substrate, creating an isolation region between the fins, depositing an oxide liner, thinning the oxide liner, depositing an insulation material, recessing the insulation material, and forming a gate structure over the fins and the isolation region.
- Forming first and second fins over a semiconductor substrate
- Creating an isolation region between the fins
- Depositing an oxide liner along the fins and the substrate
- Thinning the oxide liner
- Depositing an insulation material over the oxide liner
- Recessing the insulation material
- Forming a gate structure over the fins and the isolation region
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the manufacturing of advanced integrated circuits.
Problems Solved
This technology solves the problem of improving the performance and efficiency of semiconductor devices by providing a method for forming isolation regions with precise control.
Benefits
The benefits of this technology include enhanced device performance, increased integration density, and improved reliability of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance microprocessors, memory chips, and other semiconductor devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods for forming isolation regions in semiconductor devices, such as deposition and etching processes.
What are the limitations of this technology in terms of scalability and cost-effectiveness?
One limitation of this technology could be the scalability of the manufacturing process to larger substrates or higher volumes. Another limitation could be the cost-effectiveness of implementing this method compared to existing techniques.
Original Abstract Submitted
in an embodiment, a method includes: forming a first fin and a second fin over a semiconductor substrate; forming an isolation region between the first fin and the second fin, forming the isolation region comprising: depositing an oxide liner along the first fin, the second fin, and the semiconductor substrate, the oxide liner comprising a first upper portion and a first lower portion along the first fin, the first lower portion being between the first upper portion and the semiconductor substrate; thinning the oxide liner; depositing an insulation material over the oxide liner; and recessing the insulation material; and forming a gate structure over the first fin, the second fin, and the isolation region.
