Taiwan semiconductor manufacturing co., ltd. (20240186186). Dummy Fin with Reduced Height and Method Forming Same simplified abstract
Contents
- 1 Dummy Fin with Reduced Height and Method Forming Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Dummy Fin with Reduced Height and Method Forming Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 What are the limitations of this technology in real-world applications?
- 1.11 How does this technology compare to existing solutions in the market?
- 1.12 Original Abstract Submitted
Dummy Fin with Reduced Height and Method Forming Same
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Shih-Yao Lin of New Taipei City (TW)
Dummy Fin with Reduced Height and Method Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186186 titled 'Dummy Fin with Reduced Height and Method Forming Same
Simplified Explanation
The method described in the patent application involves forming a first protruding semiconductor fin and a dummy fin protruding higher than the top surfaces of isolation regions. The first protruding semiconductor fin is parallel to the dummy fin, with a gate stack formed on a first portion of the first protruding semiconductor fin and a second portion of the dummy fin. The method further includes recessing a third portion of the first protruding semiconductor fin to form a recess, recessing a fourth portion of the dummy fin to reduce its height, and forming an epitaxy semiconductor region in the recess, grown toward the dummy fin.
- Formation of a first protruding semiconductor fin and a dummy fin higher than isolation regions
- Parallel alignment of the first protruding semiconductor fin and the dummy fin
- Gate stack formation on the first protruding semiconductor fin and the dummy fin
- Recessing of the first protruding semiconductor fin to create a recess
- Reduction of the height of the dummy fin
- Growth of an epitaxy semiconductor region in the recess towards the dummy fin
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, particularly in the development of high-performance transistors.
Problems Solved
This technology addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the structure of the semiconductor fins and gate stacks.
Benefits
The benefits of this technology include enhanced transistor performance, increased efficiency, and potentially reduced power consumption in electronic devices.
Potential Commercial Applications
Potential commercial applications of this technology include the production of faster and more energy-efficient processors for computers, smartphones, and other electronic devices.
Possible Prior Art
One possible prior art in this field is the use of epitaxy semiconductor regions in semiconductor device manufacturing to improve performance and efficiency.
What are the limitations of this technology in real-world applications?
One limitation of this technology could be the complexity and cost of implementing the manufacturing process for these advanced semiconductor devices.
How does this technology compare to existing solutions in the market?
This technology offers a more advanced and optimized approach to semiconductor device manufacturing compared to existing solutions, potentially leading to superior performance and efficiency in electronic devices.
Original Abstract Submitted
a method includes forming a first protruding semiconductor fin and a dummy fin protruding higher than top surfaces of isolation regions. the first protruding semiconductor fin is parallel to the dummy fin, forming a gate stack on a first portion of the first protruding semiconductor fin and a second portion of the dummy fin. the method further includes recessing a third portion of the first protruding semiconductor fin to form a recess, recessing an fourth portion of the dummy fin to reduce a height of the fourth portion of the dummy fin, and forming an epitaxy semiconductor region in the recess. the epitaxy semiconductor region is grown toward the dummy fin.
