Taiwan semiconductor manufacturing co., ltd. (20240186180). INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE DIELECTRIC LAYER HAVING AIR GAP simplified abstract
Contents
- 1 INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE DIELECTRIC LAYER HAVING AIR GAP
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE DIELECTRIC LAYER HAVING AIR GAP - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 What are the potential environmental impacts of manufacturing this technology?
- 1.11 How does this technology compare to existing solutions in terms of cost-effectiveness?
- 1.12 Original Abstract Submitted
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE DIELECTRIC LAYER HAVING AIR GAP
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Wei-Yang Lee of Taipei City (TW)
Chia-Pin Lin of Xinpu Township (TW)
Yuan-Ching Peng of Hsinchu (TW)
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE DIELECTRIC LAYER HAVING AIR GAP - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186180 titled 'INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE DIELECTRIC LAYER HAVING AIR GAP
Simplified Explanation
The integrated circuit structure described in the patent application includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, and a backside via. The source epitaxial structure and the drain epitaxial structure are located on opposite sides of the gate structure. The front-side interconnection structure is positioned on the front side of both the source epitaxial structure and the drain epitaxial structure. The backside dielectric layer, which contains an air gap, is located on the backside of the source epitaxial structure and the drain epitaxial structure. The backside via extends through the backside dielectric layer to one of the source epitaxial structure or the drain epitaxial structure.
- Gate structure, source epitaxial structure, drain epitaxial structure, front-side interconnection structure, backside dielectric layer, and backside via are key components of the integrated circuit structure.
- Source epitaxial structure and drain epitaxial structure are on opposite sides of the gate structure.
- Front-side interconnection structure is on the front side of both the source and drain epitaxial structures.
- Backside dielectric layer has an air gap and is located on the backside of the source and drain epitaxial structures.
- Backside via extends through the backside dielectric layer to one of the epitaxial structures.
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the development of advanced integrated circuits with improved performance and efficiency.
Problems Solved
This technology solves the problem of optimizing the layout and design of integrated circuits to enhance their functionality and reliability.
Benefits
The benefits of this technology include increased circuit performance, reduced power consumption, and enhanced overall efficiency in electronic devices.
Potential Commercial Applications
The technology could be commercialized for use in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
Possible Prior Art
One possible prior art could be the use of similar structures in the fabrication of integrated circuits for electronic devices.
What are the potential environmental impacts of manufacturing this technology?
The potential environmental impacts of manufacturing this technology could include the generation of electronic waste and the consumption of resources during the production process. Implementing sustainable manufacturing practices and recycling programs could help mitigate these impacts.
How does this technology compare to existing solutions in terms of cost-effectiveness?
This technology may offer cost-effectiveness by improving the performance and efficiency of integrated circuits, leading to potential cost savings in the long run. However, the initial investment in implementing this technology may vary depending on the scale of production and market demand.
Original Abstract Submitted
an integrated circuit (ic) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, and a backside via. the source epitaxial structure and the drain epitaxial structure are respectively on opposite sides of the gate structure. the front-side interconnection structure is on a front-side of the source epitaxial structure and a front-side of the drain epitaxial structure. the backside dielectric layer is on a backside of the source epitaxial structure and a backside of the drain epitaxial structure and has an air gap therein. the backside via extends through the backside dielectric layer to a first one of the source epitaxial structure and the drain epitaxial structure.
