Taiwan semiconductor manufacturing co., ltd. (20240186179). Methods of Forming Spacers for Semiconductor Devices Including Backside Power Rails simplified abstract

Methods of Forming Spacers for Semiconductor Devices Including Backside Power Rails

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Li-Zhen Yu of New Taipei City (TW)

Huan-Chieh Su of Tianzhong Township (TW)

Lin-Yu Huang of Hsinchu (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

Methods of Forming Spacers for Semiconductor Devices Including Backside Power Rails - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186179 titled 'Methods of Forming Spacers for Semiconductor Devices Including Backside Power Rails

Simplified Explanation

The patent application describes semiconductor devices with air spacers formed in a backside interconnect structure. Here are some key points from the abstract:

• Device includes a first transistor structure, front-side interconnect structure, and backside interconnect structure.
• Backside interconnect structure includes a first dielectric layer, a first via, a first conductive line, and an air spacer.
• Air spacer is adjacent to the first conductive line, defining a boundary.

Potential Applications

The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications.

Problems Solved

This technology helps in reducing parasitic capacitance and improving the overall performance and efficiency of semiconductor devices.

Benefits

The use of air spacers in the backside interconnect structure can lead to enhanced device performance, lower power consumption, and increased reliability.

Potential Commercial Applications

The technology could be utilized in the production of high-performance integrated circuits for applications in consumer electronics, telecommunications, and computing.

Possible Prior Art

One possible prior art could be the use of other types of spacers in semiconductor devices to improve performance and reduce parasitic capacitance.

What are the limitations of this technology in terms of scalability and integration with existing manufacturing processes?

One limitation could be the complexity of integrating air spacers into existing semiconductor manufacturing processes, which may require additional steps and equipment.

How does the presence of air spacers affect the thermal characteristics of the semiconductor device?

The presence of air spacers may impact the thermal conductivity of the device, potentially affecting its overall thermal performance and reliability. Further research may be needed to understand and optimize these effects.

Original Abstract Submitted

semiconductor devices including air spacers formed in a backside interconnect structure and methods of forming the same are disclosed. in an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure; and a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a first dielectric layer on the backside of the first transistor structure; a first via extending through the first dielectric layer, the first via being electrically coupled to a first source/drain region of the first transistor structure; a first conductive line electrically coupled to the first via; and an air spacer adjacent the first conductive line, the first conductive line defining a first side boundary of the air spacer.