Taiwan semiconductor manufacturing co., ltd. (20240186148). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 What are some questions that are not answered by this article?
- 1.11 Frequently Updated Research
- 1.12 Original Abstract Submitted
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Yen-Hao Chen of New Taipei City (TW)
Wei-Han Lai of New Taipei City (TW)
Ching-Yu Chang of Yuansun Village (TW)
Chin-Hsiang Lin of Hsinchu (TW)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186148 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves manufacturing a semiconductor device by layering planarizing materials over a substrate, crosslinking the materials, and removing excess material.
- Formation of multiple layers of planarizing materials over a patterned surface
- Crosslinking a portion of the planarizing materials to improve stability
- Removal of excess material to achieve a smooth surface
- Addition of a third planarizing layer with specific components for enhanced performance
Potential Applications
The technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, memory chips, and sensors.
Problems Solved
The method addresses the challenge of achieving a flat and uniform surface on semiconductor devices, which is crucial for optimal performance and reliability.
Benefits
The use of multiple planarizing layers with specific components improves the overall quality and functionality of semiconductor devices. It also enhances the manufacturing process by simplifying the steps involved.
Potential Commercial Applications
This technology can be utilized by semiconductor manufacturers to produce high-quality and reliable devices for a wide range of applications in electronics, telecommunications, and automotive industries.
Possible Prior Art
Prior art may include similar methods of planarizing semiconductor devices using multiple layers of materials, but the specific combination of components and the crosslinking process described in this patent application may be novel.
What are some questions that are not answered by this article?
How does the crosslinking process affect the properties of the planarizing materials?
The crosslinking process is crucial in improving the stability and performance of the planarizing materials, but the specific mechanisms and effects of crosslinking on the properties of the materials are not detailed in the abstract.
Are there any limitations or challenges associated with the proposed method?
While the method described in the patent application seems promising, it is essential to consider any potential limitations or challenges that may arise during the implementation of this technology in semiconductor manufacturing processes.
Frequently Updated Research
As of now, there is no specific information available on frequently updated research related to this particular patent application.
Original Abstract Submitted
a method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. in an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. the third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. the first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.
