Taiwan semiconductor manufacturing co., ltd. (20240186142). Photolithography Methods and Resulting Structures simplified abstract
Contents
- 1 Photolithography Methods and Resulting Structures
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Photolithography Methods and Resulting Structures - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 What are some questions (generic, that could be applied to other similar articles) that are not answered by this article?
- 1.11 Frequently Updated Research
- 1.12 Original Abstract Submitted
Photolithography Methods and Resulting Structures
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chun-Yi Chang of Bade City (TW)
Chunyao Wang of Zhubei City (TW)
Photolithography Methods and Resulting Structures - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186142 titled 'Photolithography Methods and Resulting Structures
Simplified Explanation
The abstract of the patent application describes a method to reduce the internal stress in hard mask thin films, which can cause distortion and twisting during patterning.
- Internal stress in hard mask thin films is reduced using a stress-compensating process.
- Heat treatment can be used to relax the internal stress in the thin films.
- A second mask layer with an opposite internal stress component can be employed to offset the internal stress in the hard mask layer.
Potential Applications
The technology can be applied in semiconductor manufacturing processes where precise patterning of sub-micron critical dimensions is required.
Problems Solved
The technology solves the problem of distortion and twisting of hard mask thin films during patterning due to internal stress components.
Benefits
The technology improves the quality and accuracy of patterning processes in semiconductor manufacturing, leading to higher yields and better performance of electronic devices.
Potential Commercial Applications
The technology can be commercialized by semiconductor manufacturing companies to improve the efficiency and reliability of their production processes.
Possible Prior Art
Prior research may exist on methods to reduce internal stress in thin films during semiconductor manufacturing processes.
What are some questions (generic, that could be applied to other similar articles) that are not answered by this article?
How does the stress-compensating process specifically work to reduce internal stress in hard mask thin films?
The article does not provide detailed information on the specific mechanisms of the stress-compensating process.
Are there any limitations or drawbacks to the use of heat treatment to relax internal stress in thin films?
The article does not discuss any potential limitations or drawbacks of using heat treatment for stress relaxation in thin films.
Frequently Updated Research
I am not aware of any frequently updated research on this specific topic.
Original Abstract Submitted
as deposited, hard mask thin films have internal stress components which are an artifact of the material, thickness, deposition process of the mask layer as well as of the underlying materials and topography. this internal stress can cause distortion and twisting of the mask layer when it is patterned, especially when sub-micron critical dimensions are being patterned. a stress-compensating process is employed to reduce the impact of this internal stress. heat treatment can be employed to relax the stress, as an example. in another example, a second mask layer with an opposite internal stress component is employed to offset the internal stress component in the hard mask layer.
