Taiwan semiconductor manufacturing co., ltd. (20240185913). MEMORY DEVICE AND SEMICONDUCTOR DIE simplified abstract
Contents
- 1 MEMORY DEVICE AND SEMICONDUCTOR DIE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND SEMICONDUCTOR DIE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MEMORY DEVICE AND SEMICONDUCTOR DIE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hung-Li Chiang of Taipei City (TW)
Jer-Fu Wang of Taipei City (TW)
Iuliana Radu of Hsinchu County (TW)
MEMORY DEVICE AND SEMICONDUCTOR DIE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240185913 titled 'MEMORY DEVICE AND SEMICONDUCTOR DIE
Simplified Explanation
The patent application describes a memory device with a non-volatile storage device and an access transistor controlling the connection between the storage device and a source line.
- The memory device includes a non-volatile storage device with a terminal connected to a bit line.
- The access transistor, made up of an n-type and p-type field effect transistor stacked together, controls the connection between the storage device and a source line.
- The gate terminals of the n-type and p-type transistors are connected to different word lines.
- The common source/drain terminals of the transistors are connected to the storage device and the source line.
Potential Applications
This technology could be used in:
- Solid-state drives
- Flash memory devices
- Embedded systems
Problems Solved
- Improved data storage and retrieval
- Increased speed and efficiency in memory devices
Benefits
- Faster data access
- Higher storage capacity
- Enhanced reliability
Potential Commercial Applications
Optimized Memory Device Technology for Enhanced Data Storage
Possible Prior Art
Prior art may include similar memory device structures using different transistor configurations.
== What are the limitations of this technology in terms of scalability and integration with other components?
Scalability Limitations
The technology may face challenges in scaling down to smaller node sizes due to increased complexity.
Integration Challenges
Integrating this technology with other components on a semiconductor die may require additional design considerations to ensure compatibility and performance.
Original Abstract Submitted
a memory device and a semiconductor die are provided. the memory device includes: a non-volatile storage device, with a first terminal coupled to a bit line; and an access transistor, configured to control electrical connection between a second terminal of the non-volatile storage device and a source line, and comprising an n-type field effect transistor (nfet) and a p-type field effect transistor (pfet) stacked on the nfet. a common source/drain terminal of the nfet and the pfet is coupled to the second terminal of the non-volatile storage device. another common source/drain terminal of the nfet and the pfet is coupled to the source line. further, gate terminals of the nfet and the pfet are coupled to different word lines.
