Taiwan semiconductor manufacturing co., ltd. (20240185911). Sub-Word Line Driver Placement For Memory Device simplified abstract
Contents
Sub-Word Line Driver Placement For Memory Device
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Ching-Wei Wu of Caotun Town (TW)
Hau-Tai Shieh of Hsinchu City (TW)
Sub-Word Line Driver Placement For Memory Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240185911 titled 'Sub-Word Line Driver Placement For Memory Device
Simplified Explanation
The patent application abstract describes a memory system with unit storage circuits that are arranged adjacent to each other. Each unit storage circuit includes two groups of memory cells controlled by separate sub-word line drivers, as well as a common word line driver that applies a control signal to all unit storage circuits.
- Unit storage circuits abut each other
- Each unit storage circuit has two groups of memory cells
- Separate sub-word line drivers control each group of memory cells
- Common word line driver applies control signal to all unit storage circuits
- Potential Applications
This technology could be applied in various memory systems, such as computer RAM, solid-state drives, and other electronic devices requiring fast and efficient data storage.
- Problems Solved
This innovation solves the problem of efficiently controlling and accessing memory cells in a memory system, improving overall performance and reliability.
- Benefits
The benefits of this technology include increased speed, reliability, and efficiency in memory systems, leading to better performance in electronic devices.
- Potential Commercial Applications
The potential commercial applications of this technology include computer hardware manufacturing, data storage solutions, and electronic device production.
- Possible Prior Art
One possible prior art could be memory systems with unit storage circuits controlled by separate sub-word line drivers, but without a common word line driver for all unit storage circuits.
- What is the manufacturing cost of implementing this technology?
The manufacturing cost of implementing this technology would depend on various factors such as the complexity of the memory system, the quality of materials used, and the scale of production.
- How does this technology compare to existing memory systems in terms of speed and efficiency?
This technology offers improved speed and efficiency compared to existing memory systems by providing separate control for different groups of memory cells within each unit storage circuit.
Original Abstract Submitted
disclosed herein are related to a memory system including unit storage circuits. in one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. in one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. in one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.
