Taiwan semiconductor manufacturing co., ltd. (20240185105). ELECTRONIC DEVICE WITH CONDUCTIVE RESONATOR simplified abstract

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ELECTRONIC DEVICE WITH CONDUCTIVE RESONATOR

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Jiun-Yun Li of Taipei City (TW)

Shih-Yuan Chen of Taipei City (TW)

Yao-Chun Chang of Taipei City (TW)

Ian Huang of Taipei City (TW)

Chiung-Yu Chen of Taipei City (TW)

ELECTRONIC DEVICE WITH CONDUCTIVE RESONATOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240185105 titled 'ELECTRONIC DEVICE WITH CONDUCTIVE RESONATOR

Simplified Explanation

The electronic device described in the patent application includes a pair of depletion gates, an accumulation gate, and a conductive resonator. The depletion gates are spaced apart from each other, with the accumulation gate positioned over them. The conductive resonator, which consists of three portions, is located over the depletion gates and the accumulation gate. The first and second portions of the conductive resonator are on opposite sides of the accumulation gate, while the third portion interconnects them and extends across the depletion gates. Additionally, the bottom surface of the first portion of the conductive resonator is lower than the bottom surface of the accumulation gate.

  • Pair of depletion gates
  • Accumulation gate positioned over the depletion gates
  • Conductive resonator with three portions
  • First and second portions on opposite sides of the accumulation gate
  • Third portion interconnects the first and second portions across the depletion gates
  • Bottom surface of the first portion of the conductive resonator is lower than the bottom surface of the accumulation gate

Potential Applications

The technology described in this patent application could be applied in the field of electronic devices, particularly in the development of advanced circuitry and signal processing systems.

Problems Solved

This technology solves the problem of improving the performance and efficiency of electronic devices by optimizing the layout and functionality of key components such as depletion gates and conductive resonators.

Benefits

The benefits of this technology include enhanced signal processing capabilities, increased circuit efficiency, and improved overall performance of electronic devices.

Potential Commercial Applications

One potential commercial application of this technology could be in the manufacturing of high-speed communication devices, such as wireless routers and data transmission systems.

Possible Prior Art

One possible prior art for this technology could be the use of similar structures in the design of integrated circuits and semiconductor devices.

What are the potential limitations of this technology in real-world applications?

One potential limitation of this technology in real-world applications could be the complexity of manufacturing processes required to implement the design of the electronic device described in the patent application.

How does this technology compare to existing solutions or alternative technologies?

This technology offers a unique approach to improving the performance of electronic devices by optimizing the layout and functionality of key components, such as depletion gates and conductive resonators. Compared to existing solutions, this technology may provide enhanced signal processing capabilities and increased circuit efficiency.


Original Abstract Submitted

an electronic device includes a pair of depletion gates, an accumulation gate, and a conductive resonator. the depletion gates are spaced apart from each other. the accumulation gate is over the depletion gates. the conductive resonator is over the depletion gates and the accumulation gate. the conductive resonator includes a first portion, a second portion, and a third portion. the first portion and the second portion are on opposite sides of the accumulation gate. the third portion interconnects the first and second portions of the conductive resonator and across the depletion gates. a bottom surface of the first portion of the conductive resonator is lower than a bottom surface of the accumulation gate.