Taiwan semiconductor manufacturing co., ltd. (20240183025). FILM FORMING APPARATUS AND METHOD FOR REDUCING ARCING simplified abstract

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FILM FORMING APPARATUS AND METHOD FOR REDUCING ARCING

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Po-Wei Wang of Taichung (TW)

Chao-Hsing Lai of Hsinchu (TW)

FILM FORMING APPARATUS AND METHOD FOR REDUCING ARCING - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240183025 titled 'FILM FORMING APPARATUS AND METHOD FOR REDUCING ARCING

Simplified Explanation

The present disclosure describes a substrate processing system with a chamber, a target, a magnetron, a pedestal, and a first gas injector.

  • The system includes a chamber where substrate processing takes place.
  • A target is located within the chamber for material deposition.
  • A magnetron is positioned near the target to generate a plasma.
  • A pedestal is inside the chamber to hold the substrate.
  • A first gas injector, located at a sidewall of the chamber, introduces gases into the chamber.
      1. Potential Applications

This technology can be used in semiconductor manufacturing, thin film deposition, and surface modification processes.

      1. Problems Solved

This system provides a controlled environment for precise material deposition on substrates, improving the quality and efficiency of thin film production.

      1. Benefits

The substrate processing system offers enhanced uniformity, adhesion, and thickness control of deposited films, leading to higher quality end products.

      1. Potential Commercial Applications

This technology can be utilized in the production of solar cells, integrated circuits, and optical coatings for various industries.

      1. Possible Prior Art

Prior art may include similar substrate processing systems with gas injectors for material deposition processes.

        1. What are the safety measures in place for operating this system?

Safety measures for operating the system may include proper training for handling hazardous materials, emergency shutdown procedures, and equipment maintenance protocols.

        1. How does this system compare to traditional substrate processing methods?

Compared to traditional methods, this system offers improved control over deposition parameters, resulting in higher quality and more precise thin films.


Original Abstract Submitted

embodiments of the present disclosure provide a substrate processing system. in one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. the first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. the first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. the second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.

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