Taiwan semiconductor manufacturing co., ltd. (20240164225). RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE simplified abstract

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RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Jheng-Hong Jiang of Hsinchu (TW)

Chung-Liang Cheng of Changhua County (TW)

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240164225 titled 'RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE

Simplified Explanation

A resistive random access memory (RRAM) device is described in the abstract of a patent application. The RRAM device includes a bottom electrode via, a bottom electrode, a top electrode, and a switching layer.

  • Bottom electrode via in a first dielectric layer
  • Bottom electrode with a tapered shape and a base portion extending upwardly from a bottom surface to an interface
  • Top electrode in a second dielectric layer, distanced above and vertically aligned with the bottom electrode
  • Switching layer between the first and second dielectric layers enclosing the bottom electrode
    • Potential Applications:**

- Non-volatile memory devices - Neuromorphic computing - Artificial intelligence applications

    • Problems Solved:**

- Improved memory storage and retrieval - Enhanced energy efficiency - Increased data processing speed

    • Benefits:**

- Higher memory density - Lower power consumption - Faster data access times

    • Potential Commercial Applications of RRAM Technology:**

- Consumer electronics - Internet of Things (IoT) devices - Data centers

    • Possible Prior Art:**

One example of prior art in resistive random access memory technology is the development of memristors, which are devices that can change their resistance in response to applied voltage.

    • Unanswered Questions:**
    • 1. How does the RRAM device compare to other types of non-volatile memory technologies in terms of speed and energy efficiency?**

The article does not provide a direct comparison between RRAM and other non-volatile memory technologies such as NAND flash or magnetic storage.

    • 2. What are the potential challenges or limitations of implementing RRAM technology on a large scale in commercial applications?**

The article does not address the scalability or manufacturing challenges that may arise when implementing RRAM technology in mass production for commercial use.


Original Abstract Submitted

a resistive random access memory (rram) device is provided. the rram includes: a bottom electrode via disposed in a first dielectric layer; a bottom electrode electrically connected to the bottom electrode via and protruding upwardly from the bottom electrode via in a vertical direction, wherein the bottom electrode has a tapered shape and includes a base portion extending upwardly from a bottom surface to an interface and a tip portion extending upwardly from the interface to a top surface; a top electrode disposed in a second dielectric layer, the top electrode distanced above and vertically aligned with the bottom electrode; and a switching layer disposed between the first dielectric layer and the second dielectric layer, the switching layer enclosing the bottom electrode, wherein a conductive path between the bottom electrode and the top electrode is formed when a forming voltage is applied.

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