Taiwan semiconductor manufacturing co., ltd. (20240164111). ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER simplified abstract

ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Song-Fu Liao of Taipei City (TW)

Rainer Yen-Chieh Huang of Changhua County (TW)

Hai-Ching Chen of Hsinchu City (TW)

Chung-Te Lin of Tainan City (TW)

ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240164111 titled 'ANNEALED SEED LAYER TO IMPROVE FERROELECTRIC PROPERTIES OF MEMORY LAYER

Simplified Explanation

The present disclosure relates to an integrated chip with a memory layer containing a ferroelectric material, an annealed seed layer, and a first conductive structure arranged over a substrate.

• Memory layer contains a ferroelectric material
• Annealed seed layer is arranged between the first and second conductive structures
• First conductive structure is arranged over a substrate

Potential Applications

This technology could be applied in:

• Memory storage devices
• Semiconductor manufacturing

Problems Solved

This technology helps in:

• Improving memory storage capacity
• Enhancing semiconductor performance

Benefits

The benefits of this technology include:

• Increased data storage efficiency
• Improved device reliability

Potential Commercial Applications

The potential commercial applications of this technology include:

• Memory chips for consumer electronics
• Semiconductor components for industrial use

Possible Prior Art

One possible prior art for this technology could be:

• Memory chips with similar layered structures

How does this technology compare to existing memory storage solutions?

This technology offers improved data storage efficiency and device reliability compared to existing solutions.

What are the specific materials used in the memory layer and seed layer?

The memory layer contains a ferroelectric material, and the seed layer is annealed to enhance its properties.

Original Abstract Submitted

in some embodiments, the present disclosure relates to an integrated chip that includes a first conductive structure arranged over a substrate. a memory layer is arranged over the first conductive structure, below a second conductive structure, and includes a ferroelectric material. an annealed seed layer is arranged between the first and second conductive structures and directly on a first side of the memory layer. an amount of the crystal structure that includes an orthorhombic phase is greater than about 35 percent.