Taiwan semiconductor manufacturing co., ltd. (20240164109). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
Contents
THREE-DIMENSIONAL MEMORY DEVICES
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sheng-Chen Wang of Hsinchu (TW)
Feng-Cheng Yang of Zhudong Township (TW)
Chung-Te Lin of Tainan City (TW)
THREE-DIMENSIONAL MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164109 titled 'THREE-DIMENSIONAL MEMORY DEVICES
Simplified Explanation
The abstract describes a device with a word line, data storage layer, channel layer, back gate isolator, and a bit line with main and extension regions.
- Word line: Extends in a first direction.
- Data storage layer: Located on a sidewall of the word line.
- Channel layer: Positioned on a sidewall of the data storage layer.
- Back gate isolator: Found on a sidewall of the channel layer.
- Bit line: Consists of a main region and an extension region, with the main region contacting the channel layer and the extension region separated from the channel layer by the back gate isolator. The bit line extends in a second direction perpendicular to the first direction.
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- Potential Applications
This technology could be applied in:
- Memory devices
- Semiconductor manufacturing
- Problems Solved
This technology helps in:
- Improving data storage efficiency
- Enhancing semiconductor device performance
- Benefits
The benefits of this technology include:
- Increased data storage capacity
- Enhanced device speed and reliability
- Potential Commercial Applications
This technology could be utilized in:
- Consumer electronics
- Data centers
- Possible Prior Art
One possible prior art for this technology could be the use of similar structures in memory devices or semiconductor devices.
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- Unanswered Questions
- How does this technology compare to existing memory device structures?
This article does not provide a direct comparison with existing memory device structures, leaving room for further analysis and evaluation.
- What are the specific manufacturing processes involved in creating this device?
The article does not delve into the detailed manufacturing processes involved in creating this device, which could be crucial for understanding its practical implementation and scalability.
Original Abstract Submitted
in an embodiment, a device includes: a word line extending in a first direction; a data storage layer on a sidewall of the word line; a channel layer on a sidewall of the data storage layer; a back gate isolator on a sidewall of the channel layer; and a bit line having a first main region and a first extension region, the first main region contacting the channel layer, the first extension region separated from the channel layer by the back gate isolator, the bit line extending in a second direction, the second direction perpendicular to the first direction.
