Taiwan semiconductor manufacturing co., ltd. (20240162347). INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chansyun David Yang of Shinchu (TW)
Keh-Jeng Chang of Hsinchu (TW)
Chan-Lon Yang of Taipei City (TW)
INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162347 titled 'INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE
Simplified Explanation
The present disclosure describes a semiconductor device that includes a first fin structure, an isolation structure in contact with a top surface of the first fin structure, a substrate layer in contact with the isolation structure, an epitaxial layer in contact with the isolation structure and the substrate layer, and a second fin structure above the first fin structure and in contact with the epitaxial layer.
- The semiconductor device includes a first fin structure.
- An isolation structure is in contact with the top surface of the first fin structure.
- A substrate layer is in contact with the isolation structure.
- An epitaxial layer is in contact with the isolation structure and the substrate layer.
- A second fin structure is above the first fin structure and in contact with the epitaxial layer.
Potential Applications
The technology described in this patent application could be applied in:
- Semiconductor manufacturing
- Integrated circuit design
- Nanotechnology research
Problems Solved
This technology helps address the following issues:
- Enhancing semiconductor device performance
- Improving integration density
- Enhancing device reliability
Benefits
The benefits of this technology include:
- Increased efficiency in semiconductor devices
- Enhanced performance capabilities
- Improved overall device functionality
Potential Commercial Applications
The potential commercial applications of this technology could include:
- Consumer electronics
- Telecommunications industry
- Automotive sector
Possible Prior Art
One possible prior art related to this technology is the use of epitaxial layers in semiconductor devices to improve performance and integration density.
Unanswered Questions
How does this technology compare to existing semiconductor device structures?
This article does not provide a direct comparison to existing semiconductor device structures, leaving the reader to wonder about the specific advantages and differences.
What specific manufacturing processes are required to implement this technology?
The article does not delve into the specific manufacturing processes needed to implement this semiconductor device, leaving a gap in understanding for readers interested in the practical aspects of the technology.
Original Abstract Submitted
the present disclosure describes a semiconductor device includes a first fin structure, an isolation structure in contact with a top surface of the first fin structure, a substrate layer in contact with the isolation structure, an epitaxial layer in contact with the isolation structure and the substrate layer, and a second fin structure above the first fin structure and in contact with the epitaxial layer.
