Taiwan semiconductor manufacturing co., ltd. (20240162336). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Ming-Heng Tsai of Taipei City (TW)

Chun-Sheng Liang of Changhua County (TW)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162336 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The semiconductor structure described in the abstract includes a first stack structure with first nanostructures, a second stack structure with second nanostructures, and a dielectric wall between them, all positioned above an isolation structure.

• The semiconductor structure consists of two stack structures with nanostructures, separated by a dielectric wall.
• The first stack structure contains first nanostructures, while the second stack structure contains second nanostructures.
• The dielectric wall is positioned between the first and second stack structures, directly above a portion of the isolation structure.

Potential Applications

This semiconductor structure could be used in:

• Advanced electronic devices
• High-performance computing systems
• Nanotechnology research

Problems Solved

This technology addresses issues related to:

• Increasing integration density in semiconductor devices
• Enhancing performance and efficiency of electronic components
• Improving the scalability of semiconductor manufacturing processes

Benefits

The benefits of this technology include:

• Higher packing density of nanostructures
• Improved electrical properties of semiconductor devices
• Enhanced overall performance of electronic systems

Potential Commercial Applications

This technology could be applied in:

• Semiconductor manufacturing industry
• Consumer electronics market
• Telecommunications sector

Possible Prior Art

One possible prior art for this technology could be:

• Previous patents related to nanostructure integration in semiconductor devices

Unanswered Questions

How does the dielectric wall impact the overall performance of the semiconductor structure?

The dielectric wall plays a crucial role in separating the first and second stack structures, but its specific effects on performance are not detailed in the abstract.

What are the specific dimensions and materials used for the nanostructures in the first and second stack structures?

The abstract mentions the presence of nanostructures but does not provide specific information on their dimensions or materials, which could be crucial for understanding the technology in more detail.

Original Abstract Submitted

semiconductor structures and methods for manufacturing the same are provided. the semiconductor structure includes a first stack structure extends above the isolation structure, and the first stack structure includes a plurality of first nanostructures along a first direction. the semiconductor structure also includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of second nanostructures along the first direction. a first dielectric wall between the first stack structure and the second stack structure, and the first dielectric wall is directly over a first portion of the isolation structure and surrounded by a second portion of the isolation structure, and a top surface of the first portion of the isolation structure is lower than a top surface of the second portion of the isolation structure.