Taiwan semiconductor manufacturing co., ltd. (20240162333). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Wan-Yi Kao of Baoshan Township (TW)
Hung Cheng Lin of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162333 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
Simplified Explanation
The abstract describes a patent application related to manufacturing inner spacers for nanostructures using a dielectric material that is treated to add material and cause an expansion in volume to close any seams that could interfere with subsequent processes.
- Dielectric material is deposited for inner spacers in semiconductor devices.
- The treated dielectric material expands in volume to close any seams that may interfere with subsequent processes.
Potential Applications
The technology can be applied in the manufacturing of semiconductor devices, specifically in the fabrication of inner spacers for nanostructures.
Problems Solved
1. Seam interference in subsequent processes due to inner spacers in nanostructures. 2. Ensuring the proper functioning and reliability of semiconductor devices.
Benefits
1. Improved performance and reliability of semiconductor devices. 2. Enhanced manufacturing processes for nanostructures. 3. Increased efficiency in semiconductor fabrication.
Potential Commercial Applications
Optimizing inner spacer manufacturing processes for semiconductor devices.
Possible Prior Art
There may be prior art related to the manufacturing of inner spacers for nanostructures using dielectric materials in semiconductor devices.
What are the specific materials used for the treatment process in this patent application?
The specific materials used for the treatment process in this patent application are not mentioned in the abstract. Further details would be needed to determine the exact materials involved in the treatment process.
How does the expansion in volume of the dielectric material help in closing seams in the inner spacers?
The expansion in volume of the dielectric material helps in closing seams in the inner spacers by filling any gaps or voids that could potentially interfere with subsequent processes. This expansion ensures a more uniform and seamless structure for the inner spacers, improving the overall quality and reliability of the semiconductor devices.
Original Abstract Submitted
semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. in embodiments a dielectric material is deposited for the inner spacer and then treated. the treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.
