Taiwan semiconductor manufacturing co., ltd. (20240162331). STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES simplified abstract

STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Ko-Cheng Liu of Hsinchu City (TW)

Chang-Miao Liu of Hsinchu City (TW)

STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162331 titled 'STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES

Simplified Explanation

The present disclosure describes a method for forming a semiconductor device with a unique structure involving the use of different semiconductor layers and a metal gate.

• Forming a stack with alternating first and second semiconductor layers over a semiconductor substrate.
• Creating a dummy gate structure that wraps around the stack.
• Forming a gate spacer on the dummy gate structure.
• Embedding a dielectric layer with the dummy gate.
• Removing the dummy gate to create a gate trench.
• Removing the second semiconductor layers through the gate trench to form semiconductor sheets.
• Forming a metal gate around the semiconductor sheets.
• Creating a source/drain feature adjacent to the metal gate and connecting to the semiconductor sheets.

Potential Applications

This technology can be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors used in integrated circuits.

Problems Solved

This method allows for the creation of intricate semiconductor structures with improved performance and efficiency compared to traditional methods.

Benefits

The use of different semiconductor layers and a metal gate can enhance the functionality and speed of semiconductor devices, leading to better overall performance.

Potential Commercial Applications

This innovative technology can be utilized in the production of cutting-edge electronic devices, including smartphones, computers, and other consumer electronics.

Possible Prior Art

One possible prior art could be the use of similar techniques in the fabrication of semiconductor devices, but with different materials or processes.

Unanswered Questions

== How does this method compare to existing semiconductor fabrication techniques? This article does not provide a direct comparison to traditional methods of semiconductor device manufacturing. It would be beneficial to understand the specific advantages and limitations of this new approach in relation to established practices.

== What are the potential challenges or limitations of implementing this technology on a large scale? The article does not address any potential obstacles that may arise when scaling up the production of semiconductor devices using this method. It would be important to explore factors such as cost, scalability, and compatibility with existing manufacturing processes.

Original Abstract Submitted

the present disclosure provides a method that includes forming a stack including first and second semiconductor layers over a semiconductor substrate, the first and second semiconductor layers having different material compositions and alternating with one another within the stack; forming a dummy gate structure over the stack, the dummy gate structure wrapping around top and sidewall surfaces of the stack; forming a gate spacer on sidewalls of the dummy gate structure and disposed on the top of the stack; forming a dielectric layer with the dummy gate embedded therein; removing the dummy gate structure, resulting in a gate trench; removing the second semiconductor layers through the gate trench such that the first semiconductor layers form semiconductor sheets; forming a metal gate wrapping around the semiconductor sheets; and thereafter, forming a source/drain feature adjacent the metal gate and connecting to the semiconductor sheets.