Taiwan semiconductor manufacturing co., ltd. (20240162321). SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Huang-Chao Chang of Hsinchu (TW)
Chun-Sheng Liang of Hsinchu (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162321 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor structure described in the patent application includes a substrate, a dielectric wall, and two device units. The dielectric wall has two side surfaces opposite to each other, with the device units formed at each side surface. Each device unit consists of channel features, a gate feature, and a dielectric filler unit. The channel features are located on the side surface of the dielectric wall and spaced apart from each other, while the gate feature surrounds the channel features. The dielectric filler unit contains first dielectric fillers with a higher dielectric constant than the dielectric wall, placed between the dielectric wall and the channel features.
- The semiconductor structure comprises a dielectric wall with two side surfaces, each hosting a device unit.
- Each device unit includes channel features, a gate feature, and a dielectric filler unit.
- The dielectric filler unit contains first dielectric fillers with a higher dielectric constant than the dielectric wall.
Potential Applications
The technology described in the patent application could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
This technology helps in:
- Enhancing the performance of semiconductor devices
- Improving the efficiency of electronic components
- Reducing signal interference in circuits
Benefits
The benefits of this technology include:
- Higher dielectric constant for improved performance
- Better insulation between components
- Enhanced reliability of semiconductor structures
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor companies
- Electronics manufacturers
- Research institutions
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor structures with dielectric walls and device units.
Unanswered Questions
How does this technology compare to existing semiconductor structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor structures to assess performance and efficiency.
What are the specific manufacturing processes involved in creating the semiconductor structure described in the patent application?
The article does not delve into the detailed manufacturing processes involved in creating the semiconductor structure.
Original Abstract Submitted
a semiconductor structure includes a substrate, a dielectric wall, and two device units. the dielectric wall has two side surfaces opposite to each other. the two device units are respectively formed at the two side surfaces of the dielectric wall. each of the device units includes channel features, a gate feature and a dielectric filler unit. the channel features are disposed on a corresponding one of the side surfaces of the dielectric wall, and spaced apart from each other. the gate feature is formed around the channel features and disposed on the corresponding one of the side surfaces of the dielectric wall. the dielectric filler unit includes a plurality of first dielectric fillers, each of which is disposed between the dielectric wall and a corresponding one of the channel features. the first dielectric fillers have a dielectric constant greater than that of the dielectric wall.
