Taiwan semiconductor manufacturing co., ltd. (20240162310). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Wen-Chiang Hong of Taipei City (TW)
Chih-Hao Chang of Chu-Bei City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162310 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The semiconductor structure described in the patent application includes a gate structure, a first source/drain structure, a first contact structure, and a second contact structure.
- The gate structure is formed over a substrate.
- The first source/drain structure is formed adjacent to the gate structure.
- The first contact structure is formed over a first side of the first source/drain structure, with a portion of it lower than the top surface of the first source/drain structure.
- The second contact structure is formed over a second side of the first source/drain structure, in direct contact with the first contact structure.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This technology addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the contact structures between different components.
Benefits
The benefits of this technology include enhanced device performance, increased reliability, and potentially lower power consumption in semiconductor devices.
Potential Commercial Applications
The technology could have commercial applications in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar contact structures in semiconductor devices to improve device performance and reliability.
Unanswered Questions
How does this technology compare to existing contact structure designs in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing contact structure designs. Further research or testing would be needed to evaluate the performance and efficiency of this innovation in comparison to current designs.
What are the potential challenges or limitations in implementing this technology on a larger scale for commercial production?
The article does not address the potential challenges or limitations in scaling up this technology for commercial production. Factors such as cost, manufacturing processes, and compatibility with existing technologies could pose challenges that need to be explored further.
Original Abstract Submitted
semiconductor structures and methods for manufacturing the same are provided. the semiconductor structure includes a gate structure formed over a substrate, and a first source/drain (s/d) structure formed adjacent to the gate structure. the semiconductor structure includes a first contact structure formed over a first side of the first s/d structure, and a portion of the first contact structure is lower than a top surface of the first s/d structure. the semiconductor structure includes a second contact structure formed over a second side of the first s/d structure, and the second contact structure is in direct contact with the first contact structure.
