Taiwan semiconductor manufacturing co., ltd. (20240162308). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Pin Chun Shen of Changhua (TW)

Che Chia Chang of Hsinchu (TW)

Li-Ying Wu of Hsinchu (TW)

Jen-Hsiang Lu of Taipei (TW)

Wen-Chiang Hong of Taipei (TW)

Chun-Wing Yeung of Hsinchu (TW)

Ta-Chun Lin of Hsinchu (TW)

Chun-Sheng Liang of Changhua (TW)

Shih-Hsun Chang of Hsinchu (TW)

Chih-Hao Chang of Hsinchu (TW)

Yi-Hsien Chen of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162308 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

Simplified Explanation

The present disclosure describes a semiconductor structure with a source/drain feature that includes a central cavity, and a source/drain contact feature formed within the central cavity of the source/drain region. The source/drain contact feature is surrounded by the source/drain region and may extend to the lowermost of multiple semiconductor layers.

• Source/drain feature with central cavity
• Source/drain contact feature wrapped around by the source/drain region
• Source/drain contact feature extending to lowermost semiconductor layers

Potential Applications

This technology could be applied in:

• Advanced semiconductor devices
• High-performance integrated circuits
• Power electronics

Problems Solved

This innovation addresses:

• Enhanced contact resistance
• Improved electrical performance
• Increased device reliability

Benefits

The benefits of this technology include:

• Higher efficiency in semiconductor devices
• Better overall performance
• Longer lifespan of integrated circuits

Potential Commercial Applications

This technology has potential in:

• Semiconductor manufacturing industry
• Electronics and consumer goods sector
• Automotive and aerospace industries

Possible Prior Art

One possible prior art is the use of contact features within semiconductor structures to improve device performance. However, the specific configuration of a source/drain contact feature within a central cavity of the source/drain region as described in this disclosure may be novel.

How does this technology compare to existing semiconductor structures with regard to contact resistance and electrical performance?

This article does not provide a direct comparison with existing semiconductor structures in terms of contact resistance and electrical performance. Further research or testing may be needed to evaluate the performance of this technology against current solutions.

What are the potential challenges in implementing this semiconductor structure in mass production processes?

The article does not address the potential challenges in mass-producing semiconductor structures with this specific design. Factors such as scalability, cost-effectiveness, and compatibility with existing manufacturing processes could be important considerations that are not covered in the current information.

Original Abstract Submitted

the present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. the source/drain contact feature may extend to a lower most of a plurality semiconductor layers.