Taiwan semiconductor manufacturing co., ltd. (20240162303). Gate Structures in Transistors and Method of Forming Same simplified abstract
Contents
- 1 Gate Structures in Transistors and Method of Forming Same
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Gate Structures in Transistors and Method of Forming Same - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Gate Structures in Transistors and Method of Forming Same
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Cheng-Lung Hung of Hsinchu (TW)
Gate Structures in Transistors and Method of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162303 titled 'Gate Structures in Transistors and Method of Forming Same
Simplified Explanation
The patent application describes a device with two nanostructures, each surrounded by a high-k gate dielectric, and a gate electrode containing two different work function metals with a metal residue at their interface.
- The device includes a first nanostructure and a second nanostructure stacked on top of each other.
- Each nanostructure is surrounded by a high-k gate dielectric to improve performance.
- The gate electrode on top of the nanostructures contains two different work function metals.
- A metal residue at the interface between the two work function metals helps enhance device functionality.
Potential Applications
This technology could be applied in advanced semiconductor devices, such as transistors, to improve performance and efficiency.
Problems Solved
This innovation addresses the challenge of improving the functionality and performance of nanostructured devices by utilizing high-k gate dielectrics and multiple work function metals in the gate electrode.
Benefits
The device offers enhanced performance, increased efficiency, and improved functionality compared to traditional semiconductor devices.
Potential Commercial Applications
This technology could be valuable in the development of next-generation electronics, including smartphones, computers, and other high-tech devices.
Possible Prior Art
Prior art may include patents or research related to nanostructured devices, high-k gate dielectrics, and work function metals in semiconductor technology.
=== What is the manufacturing process for creating the metal residue at the interface between the two work function metals in the gate electrode? The manufacturing process for creating the metal residue at the interface between the two work function metals may involve specific deposition techniques or treatments to control the formation of the residue.
=== How does the presence of the metal residue impact the overall performance and reliability of the device? The presence of the metal residue at the interface between the two work function metals may affect the electrical properties and stability of the device, potentially influencing its performance and reliability. Further research and testing would be needed to fully understand these effects.
Original Abstract Submitted
a device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. the gate electrode includes a first work function metal; a second work function metal over the first work function metal; and a first metal residue at an interface between the first work function metal and the second work function metal, wherein the first metal residue has a metal element that is different than a metal element of the first work function metal.
