Taiwan semiconductor manufacturing co., ltd. (20240162269). BOND PAD STRUCTURE FOR BONDING IMPROVEMENT simplified abstract

BOND PAD STRUCTURE FOR BONDING IMPROVEMENT

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Sin-Yao Huang of Tainan City (TW)

Ching-Chun Wang of Tainan (TW)

Dun-Nian Yaung of Taipei City (TW)

Feng-Chi Hung of Chu-Bei City (TW)

Ming-Tsong Wang of Taipei City (TW)

Shih Pei Chou of Tainan City (TW)

BOND PAD STRUCTURE FOR BONDING IMPROVEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162269 titled 'BOND PAD STRUCTURE FOR BONDING IMPROVEMENT

Simplified Explanation

The integrated circuit (IC) described in the patent application includes a complex interconnect structure with multiple stacked metal features, terminating at a bond pad that directly contacts the lowermost metal feature.

• The IC includes a first substrate with an interconnect structure consisting of stacked metal features.
• The lowermost metal feature is closest to the substrate, while the uppermost metal feature is furthest away.
• A recess extends into the interconnect structure, terminating at a bond pad that contacts the lowermost metal feature.

Potential Applications

This technology could be applied in the semiconductor industry for advanced integrated circuits, particularly in high-performance computing and telecommunications.

Problems Solved

This innovation addresses the challenge of efficiently connecting multiple metal features in a stacked configuration within an IC, ensuring reliable electrical connections.

Benefits

The direct contact between the bond pad and the lowermost metal feature improves signal integrity and reduces resistance, enhancing overall performance of the IC.

Potential Commercial Applications

• "Advanced Interconnect Structure for High-Performance Integrated Circuits"

Possible Prior Art

There may be prior art related to stacked metal features in interconnect structures within integrated circuits, but specific examples are not provided in this patent application.

How does this technology impact the overall power consumption of the integrated circuit?

The patent application does not mention the potential impact of this technology on power consumption within the IC.

Are there any specific manufacturing processes required to implement this interconnect structure?

Details regarding the manufacturing processes or techniques needed to create this complex interconnect structure are not provided in the patent application.

Original Abstract Submitted

some embodiments relate an integrated circuit (ic) including a first substrate. an interconnect structure is disposed over the first substrate. the interconnect structure includes a plurality of metal features that are stacked over one another. a lowermost metal feature of the plurality of metal features is closest to the first substrate, an uppermost metal feature of the plurality of metal features is furthest from the first substrate, and intermediate metal features are disposed between the lowermost metal feature and the uppermost metal feature. a recess extends into the interconnect structure and terminates at a bond pad. a lower surface of the bond pad directly contacts an upper surface of the lowermost metal feature.