Taiwan semiconductor manufacturing co., ltd. (20240162264). DEVICE OVER PHOTODETECTOR PIXEL SENSOR simplified abstract

DEVICE OVER PHOTODETECTOR PIXEL SENSOR

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Jhy-Jyi Sze of Hsin-Chu City (TW)

Dun-Nian Yaung of Taipei City (TW)

Alexander Kalnitsky of San Francisco CA (US)

DEVICE OVER PHOTODETECTOR PIXEL SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162264 titled 'DEVICE OVER PHOTODETECTOR PIXEL SENSOR

Simplified Explanation

The abstract describes a semiconductor-on-insulator (SOI) dop image sensor and a method for forming the sensor. The sensor includes a semiconductor substrate with a floating node and a collector region, a photodetector, a transfer transistor, a semiconductor mesa, and a readout transistor.

• The semiconductor substrate contains a floating node and a collector region.
• A photodetector is defined in part by the collector region.
• A transfer transistor is positioned over the semiconductor substrate.
• The collector region and the floating node define source/drain regions of the transfer transistor.
• A semiconductor mesa is located over and spaced from the semiconductor substrate.
• A readout transistor is on and partially defined by the semiconductor mesa.
• A via extends from the floating node to a gate electrode of the readout transistor.

Potential Applications

The SOI dop image sensor can be used in various applications such as digital cameras, medical imaging devices, security cameras, and industrial inspection systems.

Problems Solved

This technology solves the problem of improving image sensor performance by providing a more efficient and compact design with enhanced sensitivity and signal processing capabilities.

Benefits

The benefits of this technology include higher image quality, improved low-light performance, reduced noise, increased signal-to-noise ratio, and overall better image sensor performance.

Potential Commercial Applications

The SOI dop image sensor technology can be applied in the consumer electronics industry, healthcare sector, surveillance systems, and manufacturing quality control processes.

Possible Prior Art

One possible prior art in this field is the development of CMOS image sensors with improved pixel designs and signal processing techniques to enhance image quality and performance.

Unanswered Questions

How does the size of the semiconductor mesa impact the overall performance of the image sensor?

The size of the semiconductor mesa may affect the light sensitivity and signal processing capabilities of the image sensor. A larger mesa may capture more light but could also introduce more noise.

What are the potential challenges in mass-producing SOI dop image sensors for commercial applications?

Mass production of SOI dop image sensors may face challenges related to cost, scalability, yield rates, and integration with existing manufacturing processes. Addressing these challenges is crucial for widespread adoption of this technology.

Original Abstract Submitted

various embodiments of the present application are directed towards a semiconductor-on-insulator (soi) dop image sensor and a method for forming the soi dop image sensor. in some embodiments, a semiconductor substrate comprises a floating node and a collector region. a photodetector is in the semiconductor substrate and is defined in part by a collector region. a transfer transistor is over the semiconductor substrate. the collector region and the floating node respectively define source/drain regions of the transfer transistor. a semiconductor mesa is over and spaced from the semiconductor substrate. a readout transistor is on and partially defined by the semiconductor mesa. the semiconductor mesa is between the readout transistor and the semiconductor substrate. a via extends from the floating node to a gate electrode of the readout transistor.