Taiwan semiconductor manufacturing co., ltd. (20240162227). SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu (TW)
Jung-Chien Cheng of Hsinchu (TW)
Kuan-Lun Cheng of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162227 titled 'SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME
Simplified Explanation
The semiconductor device structure described in the patent application involves forming a gate electrode layer to surround semiconductor layers in fin structures, with dielectric features in between. Here are some key points to explain the innovation:
- Formation of first dielectric feature between first and second fin structures
- Alternating stacking of first and second semiconductor layers in fin structures
- Removal of second semiconductor layers to extend first semiconductor layers laterally
- Trimming of first dielectric feature to reduce thickness on both sides
- Surrounding each first semiconductor layer with a gate electrode layer
Potential Applications
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for electronic devices.
Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the structure of fin structures and gate electrodes.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in semiconductor devices.
Potential Commercial Applications
The technology could have commercial applications in the semiconductor industry for the production of next-generation electronic devices with improved performance and energy efficiency.
Possible Prior Art
One possible prior art for this technology could be the use of similar fin structures and gate electrodes in semiconductor devices, but with different methods of formation and optimization.
Unanswered Questions
How does this technology compare to existing methods of forming semiconductor device structures?
This article does not provide a direct comparison to existing methods, so it is unclear how this technology differs in terms of efficiency and performance.
What are the specific performance improvements achieved with this technology?
The article does not specify the exact performance improvements achieved with this technology, leaving the extent of enhancement unclear.
Original Abstract Submitted
a semiconductor device structure, along with methods of forming such, are described. the method includes forming a first dielectric feature between first and the second fin structures, wherein each first and second fin structure includes first semiconductor layers and second semiconductor layers alternatingly stacked and in contact with the first dielectric layer. the method also includes removing the second semiconductor layers so that the first semiconductor layers of the first and second fin structures extend laterally from a first side and a second side of the first dielectric feature, respectively, trimming the first dielectric feature so that the first dielectric feature has a reduced thickness on both first and the second sides, and forming a gate electrode layer to surround each of the first semiconductor layers of the first and second fin structures.
