Taiwan semiconductor manufacturing co., ltd. (20240162145). RESISTOR WITHIN A VIA simplified abstract

RESISTOR WITHIN A VIA

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chi-Han Yang of Hsinchu (TW)

RESISTOR WITHIN A VIA - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162145 titled 'RESISTOR WITHIN A VIA

Simplified Explanation

The abstract describes a patent application related to semiconductor processing tools depositing various layers and components within a via for a semiconductor device.

• Semiconductor processing tools may form a via for a semiconductor device.
• The tools may deposit a metal plug within the via.
• An oxide-based layer is deposited on the metal plug within the via.
• A resistor is deposited on the oxide-based layer within the via.
• First and second landing pads are deposited on the resistor within the via.
• A first metal plug is deposited on the first landing pad and a second metal plug on the second landing pad.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.

Problems Solved

This technology helps in creating reliable and efficient connections within semiconductor devices, improving their overall performance and functionality.

Benefits

The benefits of this technology include enhanced conductivity, improved signal transmission, and increased durability of semiconductor devices.

Potential Commercial Applications

One potential commercial application of this technology could be in the semiconductor industry for producing high-performance electronic devices.

Possible Prior Art

Prior art in semiconductor processing tools and techniques for depositing layers and components within vias may exist, but specific examples are not provided in this context.

How does this technology compare to existing methods for depositing components within vias in semiconductor devices?

This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the advantages and disadvantages of this new approach.

What are the specific materials and processes used in depositing the various layers and components within the via?

The article mentions the deposition of metal plugs, oxide-based layers, resistors, and landing pads, but does not delve into the specific materials and processes involved in these depositions.

Original Abstract Submitted

in some implementations, one or more semiconductor processing tools may form a via for a semiconductor device. the one or more semiconductor processing tools may deposit a metal plug within the via. the one or more semiconductor processing tools may deposit an oxide-based layer on the metal plug within the via. the one or more semiconductor processing tools may deposit a resistor on the oxide-based layer within the via. the one or more semiconductor processing tools may deposit a first landing pad and a second landing pad on the resistor within the via. the one or more semiconductor processing tools may deposit a first metal plug on the first landing pad and a second metal plug on the second landing pad.